All MOSFET. IPZ60R070P6 Datasheet

 

IPZ60R070P6 Datasheet and Replacement


   Type Designator: IPZ60R070P6
   Marking Code: 6R070P6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 391 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 53.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 100 nC
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO247-4
 

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IPZ60R070P6 Datasheet (PDF)

 ..1. Size:1286K  infineon
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IPZ60R070P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPZ60R070P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPZ60R070P6PG-TO 247-41 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 7.1. Size:1460K  infineon
 ipz60r099c7.pdf pdf_icon

IPZ60R070P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPZ60R099C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPZ60R099C7PG-TO 247-41 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle a

 7.2. Size:1469K  infineon
 ipz60r040c7.pdf pdf_icon

IPZ60R070P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPZ60R040C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPZ60R040C7PG-TO 247-41 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle a

 7.3. Size:1296K  infineon
 ipz60r060c7.pdf pdf_icon

IPZ60R070P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPZ60R060C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPZ60R060C7PG-TO 247-41 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle a

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Datasheet: IPW80R280P7 , IPW80R290C3A , IPW80R360P7 , IPZ40N04S5-3R1 , IPZ40N04S5-5R4 , IPZ40N04S5-8R4 , IPZ40N04S5L-7R4 , IPZ60R060C7 , IRFB31N20D , IPZA60R037P7 , IPZA60R045P7 , IPZA60R060P7 , IPZA60R080P7 , IPZA60R120P7 , IPZA60R180P7 , IQE006NE2LM5 , IQE006NE2LM5CG .

History: IXTV03N400S | BS250CSM4

Keywords - IPZ60R070P6 MOSFET datasheet

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