IQE006NE2LM5 Datasheet. Specs and Replacement

Type Designator: IQE006NE2LM5  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 41 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.6 nS

Cossⓘ - Output Capacitance: 1700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00065 Ohm

Package: TSON-8-4

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IQE006NE2LM5 datasheet

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IQE006NE2LM5

IQE006NE2LM5 MOSFET PG-TSON-8-4 OptiMOSTM 5 Power-Transistor, 25 V Features 1 2 Very low on-resistance R @ V =4.5 V DS(on) GS 3 4 100% avalanche tested Superior thermal resistance N-channel 8 7 Pb-free lead plating; RoHS compliant 6 5 Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applicat... See More ⇒

 0.1. Size:1024K  infineon
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IQE006NE2LM5

IQE006NE2LM5CG MOSFET PG-TTFN-9-1 OptiMOSTM 5 Power-Transistor, 25 V 1 2 Features 3 4 Very low on-resistance R DS(on) 9 100% avalanche tested Superior thermal resistance N-channel, logic level Pb-free lead plating; RoHS compliant 8 7 Halogen-free according to IEC61249-2-21 6 5 Product validation Fully qualified according to JEDEC for Industrial Appl... See More ⇒

Detailed specifications: IPZ60R060C7, IPZ60R070P6, IPZA60R037P7, IPZA60R045P7, IPZA60R060P7, IPZA60R080P7, IPZA60R120P7, IPZA60R180P7, 60N06, IQE006NE2LM5CG, IRF1310NLPBF, IRF135SA204, IRF150P220, IRF150P221, IRF200S234, IRF3007LPBF, IRF300P226

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