IRF40H233 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRF40H233
   Marking Code: H233
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: TDSON-8-4

IRF40H233 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF40H233 Datasheet (PDF)

..1. Size:1158K infineon
irf40h233.pdf

IRF40H233MOSFETSSO8 dual (TDSON-8-4)StrongIRFET1Benefits82736 Optimized for broadest availability from distribution partners 45 175C junction temperature rated 100% UIL tested Product validation according to JEDEC standard Pb-Free ; RoHS Compliant ; Halogen-Free81726354Potential applications Brushed Motor drive applicatio

7.1. Size:565K 1
irf40h210.pdf

StrongIRFET IRF40H210 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. 1.4m Battery powered circuits max 1.7m Half-bridge and full-bridge topologies Synchronous rectifier applications ID (Silicon Limited) 201A Resonant mode power supplies

7.2. Size:562K international rectifier
irf40h210.pdf