IRF40H233 Datasheet and Replacement

IRF40H233MOSFETSSO8 dual (TDSON-8-4)StrongIRFET1Benefits82736 Optimized for broadest availability from distribution partners 45 175C junction temperature rated 100% UIL tested Product validation according to JEDEC standard Pb-Free ; RoHS Compliant ; Halogen-Free81726354Potential applications Brushed Motor drive applicatio

StrongIRFET IRF40H210 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. 1.4m Battery powered circuits max 1.7m Half-bridge and full-bridge topologies Synchronous rectifier applications ID (Silicon Limited) 201A Resonant mode power supplies

StrongIRFET IRF40H210 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. 1.4m Battery powered circuits max 1.7m Half-bridge and full-bridge topologies Synchronous rectifier applications ID (Silicon Limited) 201A Resonant mode power supplies

StrongIRFET IRF40B207 HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 40V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 3.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 4.5m Resonant mode power supplies S OR-ing and redund

StrongIRFET IRF40R207 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 4.2m Half-bridge and full-bridge topologies max 5.1mG Synchronous rectifier applications ID (Silicon Limited) 90A Resonant mode power supplie

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF40B207IIRF40B207FEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

isc N-Channel MOSFET Transistor IRF40R207, IIRF40R207FEATURESStatic drain-source on-resistance:RDS(on)5.1mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol