STD8N10L Datasheet. Specs and Replacement

Type Designator: STD8N10L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm

Package: DPAK

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STD8N10L datasheet

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STD8N10L

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STD8N10L

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STD8N10L

This datasheet has been downloaded from http //www.digchip.com at this page ... See More ⇒

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STD8N10L

STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD8N06 60 V ... See More ⇒

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Detailed specifications: STD5N20-1, STD5N20T4, STD6N10-1, STD6N10T4, STD8N06-1, STD8N06T4, STD8N10, STD8N10-1, IRF3710, STD8N10L-1, STD8N10LT4, STD8N10T4, STE100N20, STE150N10, STE15N100, STE16N100, STE180N05

Keywords - STD8N10L MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.