STD8N10L Specs and Replacement
Type Designator: STD8N10L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
Package: DPAK
STD8N10L substitution
STD8N10L datasheet
std8n10.pdf
This datasheet has been downloaded from http //www.digchip.com at this page ... See More ⇒
std8n06-1 std8n06t4.pdf
STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD8N06 60 V ... See More ⇒
Detailed specifications: STD5N20-1 , STD5N20T4 , STD6N10-1 , STD6N10T4 , STD8N06-1 , STD8N06T4 , STD8N10 , STD8N10-1 , 10N60 , STD8N10L-1 , STD8N10LT4 , STD8N10T4 , STE100N20 , STE150N10 , STE15N100 , STE16N100 , STE180N05 .
History: IRFB23N20D
Keywords - STD8N10L MOSFET specs
STD8N10L cross reference
STD8N10L equivalent finder
STD8N10L pdf lookup
STD8N10L substitution
STD8N10L replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IRFB23N20D
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