JMTL3415K Datasheet and Replacement
Type Designator: JMTL3415K
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.67 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: SOT23
JMTL3415K substitution
JMTL3415K Datasheet (PDF)
jmtl3415k.pdf

JMTL3415K Description JMT P-channel MOSFET Features Application V =-20V, I =-4A PWM Applications DS D R =38m (Typ.) @ VGS = -4.5V Load Switch DS(ON) R =48m (Typ.) @ VGS = -2.5V Power Management DS(ON) High Power and Current Handing Capability Lead Free Product is Acquired Surface Mount Package ESD Rating: HBM 2.0KV Package
jmtl3415kl.pdf

-20V, -4.1A, 32m P-channel Power Trench MOSFETJMTL3415KLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit Halogen-free; RoHS-compliantVDSS -20 V Pb-free platingVGS(th)_Typ -0.7 V ESD Rating: HBM 2.0KVID(@VGS=10V) -4.1 ARDS(ON)_Typ(@VGS=-4.5V 24 mWRDS(ON)_Typ(@VGS=-2.5V 32 mWApplications Load Switch PWM Applicat
jmtl3416ks.pdf

JMTL3416KSDescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 20V, 5A Load SwitchR
jmtl3406a.pdf

30V, 4A, 39m N-channel Power Trench MOSFETJMTL3406A Product SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit Halogen-free; RoHS-compliantVDSS 30 V Pb-free platingVGS(th)_Typ 1.4 VID(@VGS=10V) 4 AApplicationsRDS(ON)_Typ(@VGS=10V 29 mW Load Switch RDS(ON)_Typ(@VGS=4.5V 39 mW PWM Application Power ManagementDG SSO
Datasheet: IRF6898MTRPBF , IRF7101PBF , IRF7103PBF , IRF7104PBF , IRF7105PBF , IRF7301PBF , JMTL2302A , JMTL3401A , IRF9540 , G1L9N06 , JST100N30T2 , JST150N30T2 , JST180N30D5 , JST2300 , JST2301H , JST2302H , JST3400 .
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