JMTL3415K Datasheet and Replacement
Type Designator: JMTL3415K
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.67 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 165 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: SOT23
- MOSFET Cross-Reference Search
JMTL3415K Datasheet (PDF)
jmtl3415k.pdf
JMTL3415K Description JMT P-channel MOSFET Features Application V =-20V, I =-4A PWM Applications DS D R =38m (Typ.) @ VGS = -4.5V Load Switch DS(ON) R =48m (Typ.) @ VGS = -2.5V Power Management DS(ON) High Power and Current Handing Capability Lead Free Product is Acquired Surface Mount Package ESD Rating: HBM 2.0KV Package
jmtl3401a.pdf
JMTL3401A Description JMT P-channel MOSFET Features Application V =-30V, I =-4.2A PWM Applications DS D R
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK1553 | AP9926GEO | RW1C020UN | IRF441 | GSM3050S | STD5406NT4G | STD4N62K3
Keywords - JMTL3415K MOSFET datasheet
JMTL3415K cross reference
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History: 2SK1553 | AP9926GEO | RW1C020UN | IRF441 | GSM3050S | STD5406NT4G | STD4N62K3
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