All MOSFET. G1L9N06 Datasheet

 

G1L9N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: G1L9N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31.1 nC
   trⓘ - Rise Time: 53.8 nS
   Cossⓘ - Output Capacitance: 161.9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: DFN3X3

 G1L9N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

G1L9N06 Datasheet (PDF)

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 g1l9n06.pdf

G1L9N06 G1L9N06

G1L9N06 N-Channel 60 Enhancement Mode V VBVDSS=60 General Description RDS(ON)9.0m@V =10V GSThe G1L9N06 is the N-Channel logic enhancement mode power field effect transistors. These are particularly suited RDS(ON)13.3m@V =4.5V GSfor low voltage application such as notebook computer power management and other battery powered circuits I =28A Dhere high-s

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