All MOSFET. G1L9N06 Datasheet

 

G1L9N06 Datasheet and Replacement


   Type Designator: G1L9N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 53.8 nS
   Cossⓘ - Output Capacitance: 161.9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: DFN3X3
 

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G1L9N06 Datasheet (PDF)

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G1L9N06

G1L9N06 N-Channel 60 Enhancement Mode V VBVDSS=60 General Description RDS(ON)9.0m@V =10V GSThe G1L9N06 is the N-Channel logic enhancement mode power field effect transistors. These are particularly suited RDS(ON)13.3m@V =4.5V GSfor low voltage application such as notebook computer power management and other battery powered circuits I =28A Dhere high-s

Datasheet: IRF7101PBF , IRF7103PBF , IRF7104PBF , IRF7105PBF , IRF7301PBF , JMTL2302A , JMTL3401A , JMTL3415K , IRFB4115 , JST100N30T2 , JST150N30T2 , JST180N30D5 , JST2300 , JST2301H , JST2302H , JST3400 , JST3401 .

History: RDX100N60FU6 | IRLR7807Z | 2SK1939-01 | SSD10N20-400D | CSD17579Q5A | 2N6913A | SUD50P06-15L-GE3

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