G1L9N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: G1L9N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 18 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 28 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 53.8 nS
Cossⓘ - Output Capacitance: 161.9 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: DFN3X3
G1L9N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
G1L9N06 Datasheet (PDF)
..1. Size:223K liteon
g1l9n06.pdf
g1l9n06.pdf
G1L9N06 N-Channel 60 Enhancement Mode V VBVDSS=60 General Description RDS(ON)9.0m@V =10V GSThe G1L9N06 is the N-Channel logic enhancement mode power field effect transistors. These are particularly suited RDS(ON)13.3m@V =4.5V GSfor low voltage application such as notebook computer power management and other battery powered circuits I =28A Dhere high-s
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
