All MOSFET. G1L9N06 Datasheet

 

G1L9N06 Datasheet and Replacement


   Type Designator: G1L9N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 53.8 nS
   Cossⓘ - Output Capacitance: 161.9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: DFN3X3
      - MOSFET Cross-Reference Search

 

G1L9N06 Datasheet (PDF)

 ..1. Size:223K  liteon
 g1l9n06.pdf pdf_icon

G1L9N06

G1L9N06 N-Channel 60 Enhancement Mode V VBVDSS=60 General Description RDS(ON)9.0m@V =10V GSThe G1L9N06 is the N-Channel logic enhancement mode power field effect transistors. These are particularly suited RDS(ON)13.3m@V =4.5V GSfor low voltage application such as notebook computer power management and other battery powered circuits I =28A Dhere high-s

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: MTN1012ZC3 | WML11N80M3 | PSMN8R5-100ES | TPCA8078 | VBZA4412 | UT8205A | STP85N3LH5

Keywords - G1L9N06 MOSFET datasheet

 G1L9N06 cross reference
 G1L9N06 equivalent finder
 G1L9N06 lookup
 G1L9N06 substitution
 G1L9N06 replacement

 

 
Back to Top

 


 
.