G1L9N06 PDF and Equivalents Search

 

G1L9N06 Specs and Replacement

Type Designator: G1L9N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 18 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53.8 nS

Cossⓘ - Output Capacitance: 161.9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: DFN3X3

G1L9N06 substitution

- MOSFET ⓘ Cross-Reference Search

 

G1L9N06 datasheet

 ..1. Size:223K  liteon
 g1l9n06.pdf pdf_icon

G1L9N06

G1L9N06 N-Channel 60 Enhancement Mode V V BVDSS=60 General Description RDS(ON) 9.0m @V =10V GS The G1L9N06 is the N-Channel logic enhancement mode power field effect transistors. These are particularly suited RDS(ON) 13.3m @V =4.5V GS for low voltage application such as notebook computer power management and other battery powered circuits I =28A D here high-s... See More ⇒

Detailed specifications: IRF7101PBF , IRF7103PBF , IRF7104PBF , IRF7105PBF , IRF7301PBF , JMTL2302A , JMTL3401A , JMTL3415K , P55NF06 , JST100N30T2 , JST150N30T2 , JST180N30D5 , JST2300 , JST2301H , JST2302H , JST3400 , JST3401 .

Keywords - G1L9N06 MOSFET specs

 G1L9N06 cross reference
 G1L9N06 equivalent finder
 G1L9N06 pdf lookup
 G1L9N06 substitution
 G1L9N06 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.