JST100N30T2 MOSFET. Datasheet pdf. Equivalent
Type Designator: JST100N30T2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 42 nC
trⓘ - Rise Time: 19.5 nS
Cossⓘ - Output Capacitance: 280 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO252
JST100N30T2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JST100N30T2 Datasheet (PDF)
..1. Size:1070K jestek
jst100n30t2.pdf
jst100n30t2.pdf
JST100N30T2 30V,100A N-channel MOSFETFeatures Application 30V,100A Load Switch R =3.1m (Typ.) @ V =10V PWM ApplicationDS(ON) GS R =4.5m (Typ.) @ V =4.5VDS(ON) GS Advanced Trench Technology Provide Excellent R and Low Gate ChargeDS(ON)Package JST100N30T2 Absolute Maximum Ratings (T =25 unless otherwise specified)CSymbol Parameter
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
