JST100N30T2 Specs and Replacement
Type Designator: JST100N30T2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19.5 nS
Cossⓘ - Output Capacitance: 280 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO252
JST100N30T2 substitution
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JST100N30T2 datasheet
jst100n30t2.pdf
JST100N30T2 30V,100A N-channel MOSFET Features Application 30V,100A Load Switch R =3.1m (Typ.) @ V =10V PWM Application DS(ON) GS R =4.5m (Typ.) @ V =4.5V DS(ON) GS Advanced Trench Technology Provide Excellent R and Low Gate Charge DS(ON) Package JST100N30T2 Absolute Maximum Ratings (T =25 unless otherwise specified) C Symbol Parameter ... See More ⇒
Detailed specifications: IRF7103PBF , IRF7104PBF , IRF7105PBF , IRF7301PBF , JMTL2302A , JMTL3401A , JMTL3415K , G1L9N06 , 8205A , JST150N30T2 , JST180N30D5 , JST2300 , JST2301H , JST2302H , JST3400 , JST3401 , JST3415C .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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