All MOSFET. JST100N30T2 Datasheet

 

JST100N30T2 Datasheet and Replacement


   Type Designator: JST100N30T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19.5 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO252
 

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JST100N30T2 Datasheet (PDF)

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JST100N30T2

JST100N30T2 30V,100A N-channel MOSFETFeatures Application 30V,100A Load Switch R =3.1m (Typ.) @ V =10V PWM ApplicationDS(ON) GS R =4.5m (Typ.) @ V =4.5VDS(ON) GS Advanced Trench Technology Provide Excellent R and Low Gate ChargeDS(ON)Package JST100N30T2 Absolute Maximum Ratings (T =25 unless otherwise specified)CSymbol Parameter

Datasheet: IRF7103PBF , IRF7104PBF , IRF7105PBF , IRF7301PBF , JMTL2302A , JMTL3401A , JMTL3415K , G1L9N06 , 2SK3878 , JST150N30T2 , JST180N30D5 , JST2300 , JST2301H , JST2302H , JST3400 , JST3401 , JST3415C .

History: JST180N30D5 | JST2301H | JSM2302

Keywords - JST100N30T2 MOSFET datasheet

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