All MOSFET. STE100N20 Datasheet

 

STE100N20 Datasheet and Replacement


   Type Designator: STE100N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 3600(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: ISOTOP
 

 STE100N20 substitution

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STE100N20 Datasheet (PDF)

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STE100N20

STE100N20N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE V R IDSS DS(on) DSTE100N20 200 V

Datasheet: STD8N06-1 , STD8N06T4 , STD8N10 , STD8N10-1 , STD8N10L , STD8N10L-1 , STD8N10LT4 , STD8N10T4 , 2SK3878 , STE150N10 , STE15N100 , STE16N100 , STE180N05 , STE180N10 , STE22N80 , STE24N90 , STE250N05 .

Keywords - STE100N20 MOSFET datasheet

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