STE100N20 MOSFET. Datasheet pdf. Equivalent

   Type Designator: STE100N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 505 nC
   trⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 3600(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: ISOTOP

STE100N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search