STE100N20 Datasheet and Replacement
Type Designator: STE100N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 3600(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: ISOTOP
STE100N20 substitution
STE100N20 Datasheet (PDF)
ste100n20.pdf
STE100N20N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE V R IDSS DS(on) DSTE100N20 200 V
Datasheet: STD8N06-1 , STD8N06T4 , STD8N10 , STD8N10-1 , STD8N10L , STD8N10L-1 , STD8N10LT4 , STD8N10T4 , 2SK3878 , STE150N10 , STE15N100 , STE16N100 , STE180N05 , STE180N10 , STE22N80 , STE24N90 , STE250N05 .
History: IRFU310A
Keywords - STE100N20 MOSFET datasheet
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History: IRFU310A
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