STE100N20 Specs and Replacement
Type Designator: STE100N20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 3600(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: ISOTOP
STE100N20 substitution
- MOSFET ⓘ Cross-Reference Search
STE100N20 datasheet
ste100n20.pdf
STE100N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V R I DSS DS(on) D STE100N20 200 V ... See More ⇒
Detailed specifications: STD8N06-1 , STD8N06T4 , STD8N10 , STD8N10-1 , STD8N10L , STD8N10L-1 , STD8N10LT4 , STD8N10T4 , P55NF06 , STE150N10 , STE15N100 , STE16N100 , STE180N05 , STE180N10 , STE22N80 , STE24N90 , STE250N05 .
Keywords - STE100N20 MOSFET specs
STE100N20 cross reference
STE100N20 equivalent finder
STE100N20 pdf lookup
STE100N20 substitution
STE100N20 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
🌐 : EN ES РУ
LIST
Last Update
MOSFET: HAF1008S | HAF1008L | EMZB08P03H | CS30N20FA9R | AOT66613L | AOSP21313C | AOSP21311C | AOB66918L | AO3415C | AOTF20N40L
Popular searches
a608 transistor | c536 transistor | 2n706 | 2n388 | 2n3645 | 2n1307 | 2sa747 | a1941