JST60N30T2 Specs and Replacement
Type Designator: JST60N30T2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 280 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO252
JST60N30T2 substitution
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JST60N30T2 datasheet
jst60n30t2.pdf
JST60N30T2 N-Channel Power MOSFET FEATURES TO-252-2L RDS(ON) 9m @VGS=10V RDS(ON) 12m @VGS=4.5V 1. GATE 2 1 2. DRAIN 3 3. SOURCE APPLICATIONS Power switching application Hard switched and high frequency circuits Uninterruptible Power Supply MARKING EQUIV ALENT CIRCUIT YYMM=Date Code MAXIMUM RATINGS ( Ta=25 unless otherwise noted ) Symbol Limit Unit ... See More ⇒
Detailed specifications: JST2300 , JST2301H , JST2302H , JST3400 , JST3401 , JST3415C , JST4406 , JST4435 , IRLB4132 , JST80N30T2A , JST8205S , 8205S , JSM2301S , JSM2302 , JSM3400 , JSM3401L , JSM3420 .
Keywords - JST60N30T2 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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