All MOSFET. JST60N30T2 Datasheet

 

JST60N30T2 Datasheet and Replacement


   Type Designator: JST60N30T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252
 

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JST60N30T2 Datasheet (PDF)

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JST60N30T2

JST60N30T2 N-Channel Power MOSFETFEATURESTO-252-2L RDS(ON) 9m @VGS=10V RDS(ON) 12m @VGS=4.5V1. GATE 212. DRAIN33. SOURCEAPPLICATIONS Power switching application Hard switched and high frequency circuits Uninterruptible Power SupplyMARKING EQUIV ALENT CIRCUITYYMM=Date CodeMAXIMUM RATINGS ( Ta=25 unless otherwise noted )Symbol Limit Unit

Datasheet: JST2300 , JST2301H , JST2302H , JST3400 , JST3401 , JST3415C , JST4406 , JST4435 , 5N60 , JST80N30T2A , JST8205S , 8205S , JSM2301S , JSM2302 , JSM3400 , JSM3401L , JSM3420 .

History: PKC26BB | IRHG9110 | SFG019N100C3 | 2N6786U | IRF7700G | SIR690DP | IRF8736PBF

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