All MOSFET. JST60N30T2 Datasheet

 

JST60N30T2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: JST60N30T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252

 JST60N30T2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JST60N30T2 Datasheet (PDF)

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 jst60n30t2.pdf

JST60N30T2 JST60N30T2

JST60N30T2 N-Channel Power MOSFETFEATURESTO-252-2L RDS(ON) 9m @VGS=10V RDS(ON) 12m @VGS=4.5V1. GATE 212. DRAIN33. SOURCEAPPLICATIONS Power switching application Hard switched and high frequency circuits Uninterruptible Power SupplyMARKING EQUIV ALENT CIRCUITYYMM=Date CodeMAXIMUM RATINGS ( Ta=25 unless otherwise noted )Symbol Limit Unit

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