All MOSFET. JST80N30T2A Datasheet

 

JST80N30T2A Datasheet and Replacement


   Type Designator: JST80N30T2A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO252
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JST80N30T2A Datasheet (PDF)

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JST80N30T2A

JST80N30T2A30V N-Channel MosfetTO-252-2LFEATURESRDS(ON) 5m @VGS=10VRDS(ON) 7.5m @VGS=4.5VAPPLICATIONSLoad SwitchPWM ApplicationPower ManagementMARKING N-CHANNEL MOSFETYYMM:Date Code(year&month)Absolute Maximum Ratings (T =25 unless otherwise specified)CSymbol Param Max. UnitsbolV Drain-Source Voltage 30 VDSSV Gate-Source Voltage 20 VGSS

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BRF2N65 | IPB80N08S2L-07 | AONR21305C | LSF80R980GT | PHP45NQ11T | STL9P2UH7 | FRX130D2

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