JST80N30T2A MOSFET. Datasheet pdf. Equivalent
Type Designator: JST80N30T2A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 42 nC
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO252
JST80N30T2A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JST80N30T2A Datasheet (PDF)
jst80n30t2a.pdf
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JST80N30T2A30V N-Channel MosfetTO-252-2LFEATURESRDS(ON) 5m @VGS=10VRDS(ON) 7.5m @VGS=4.5VAPPLICATIONSLoad SwitchPWM ApplicationPower ManagementMARKING N-CHANNEL MOSFETYYMM:Date Code(year&month)Absolute Maximum Ratings (T =25 unless otherwise specified)CSymbol Param Max. UnitsbolV Drain-Source Voltage 30 VDSSV Gate-Source Voltage 20 VGSS
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