SNN1000L10D Datasheet and Replacement. Cross Reference Search

SNN1000L10D Datasheet (PDF)

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SNN1000L10DN-Ch Trench MOSFETPower Switching Application Features Drain-source breakdown voltage: BV =100V DSS Low gate charge device Low drain-source On resistance: R =68m (Typ.) DS(on)D Advanced trench process technology High avalanche energy, 100% test Ordering Information GSPart Number Marking Package TO-252 SNN1000L10D SNN1000L10 TO-25

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SNN1000L10D N-Ch Trench MOSFET Power Switching Application Features Drain-source breakdown voltage: BVDSS=100V Low gate charge device D Low drain-source On resistance: RDS(on)=68m (Typ.) Advanced trench process technology High avalanche energy, 100% test G Ordering Information S TO-252 Part Number Marking Package SNN1000L10D SNN1000L10 TO-252

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SNN10R10LD N-Ch Trench MOSFET Power Switching Application Features Drain-source breakdown voltage: BV =100V DSS Low R & FOM DS(on)D Low drain-source On resistance: R =8.5m (Typ.) DS(on) Fast switching and soft recovery Extremely low switching loss G Ordering Information S Part Number Marking Package TO-252 SNN10R10LD SNN10R10L TO-252 M

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SNN10R10LF N-Ch Trench MOSFET Power Switching Application Features Drain-source breakdown voltage: BV =100V DSS Low R & FOM DS(on) Low drain-source On resistance: R =8.5m (Typ.) DS(on) Fast switching and soft recovery Extremely low switching loss G D S Ordering Information Part Number Marking Package TO-220F-3L SNN10R10LF SNN10R10L TO-220F-3L

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .