ME04N25-G Specs and Replacement
Type Designator: ME04N25-G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 36 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO252
ME04N25-G substitution
- MOSFET ⓘ Cross-Reference Search
ME04N25-G datasheet
Detailed specifications: JSM4953 , JSM9435 , G2302 , KI2301 , K2N7002K , SJMN60R15F , SJMN60R38F , SNN1000L10D , AON7506 , ME08N20 , ME08N20-G , ME10N15 , ME10N15-G , ME110N10T , ME110N10F , ME120N10T , ME120N10T-G .
Keywords - ME04N25-G MOSFET specs
ME04N25-G cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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