ME04N25-G Datasheet and Replacement
Type Designator: ME04N25-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 36 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO252
ME04N25-G substitution
ME04N25-G Datasheet (PDF)
me04n25 me04n25-g.pdf
ME04N25/ME04N25-G N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)1.8@VGS=10V The ME04N25 is the N-Channel logic enhancement mode power RDS(ON)2.0@VGS=5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to
me04n25.pdf
ME04N25/ME04N25-G N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)1.8@VGS=10V The ME04N25 is the N-Channel logic enhancement mode power RDS(ON)2.0@VGS=5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to
Datasheet: JSM4953 , JSM9435 , G2302 , KI2301 , K2N7002K , SJMN60R15F , SJMN60R38F , SNN1000L10D , IRFP250 , ME08N20 , ME08N20-G , ME10N15 , ME10N15-G , ME110N10T , ME110N10F , ME120N10T , ME120N10T-G .
History: RSS090P03 | CS8205A | BRI3N80
Keywords - ME04N25-G MOSFET datasheet
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History: RSS090P03 | CS8205A | BRI3N80
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