ME10N15-G PDF and Equivalents Search

 

ME10N15-G Specs and Replacement

Type Designator: ME10N15-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.3 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.345 Ohm

Package: TO252

ME10N15-G substitution

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ME10N15-G datasheet

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ME10N15-G

ME10N15/ME10N15-G N-Channel 150-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 345m @VGS=10V The ME10N15 is the N-Channel logic enhancement mode power RDS(ON) 365m @VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to ... See More ⇒

Detailed specifications: K2N7002K , SJMN60R15F , SJMN60R38F , SNN1000L10D , ME04N25-G , ME08N20 , ME08N20-G , ME10N15 , AO4407 , ME110N10T , ME110N10F , ME120N10T , ME120N10T-G , ME12N04 , ME12N04-G , ME12N15 , ME12N15-G .

Keywords - ME10N15-G MOSFET specs

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