All MOSFET. ME10N15-G Datasheet

 

ME10N15-G Datasheet and Replacement


   Type Designator: ME10N15-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9.3 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.345 Ohm
   Package: TO252
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ME10N15-G Datasheet (PDF)

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ME10N15-G

ME10N15/ME10N15-G N-Channel 150-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)345m@VGS=10V The ME10N15 is the N-Channel logic enhancement mode power RDS(ON)365m@VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2N6450 | S-L2N7002LT1G | 2SK1574 | IXTB30N100L | WSD3042DN56 | R6007KNJ | SVF12N65CK

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