All MOSFET. ME10N15-G Datasheet

 

ME10N15-G Datasheet and Replacement


   Type Designator: ME10N15-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.3 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.345 Ohm
   Package: TO252
 

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ME10N15-G Datasheet (PDF)

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ME10N15-G

ME10N15/ME10N15-G N-Channel 150-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)345m@VGS=10V The ME10N15 is the N-Channel logic enhancement mode power RDS(ON)365m@VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to

Datasheet: K2N7002K , SJMN60R15F , SJMN60R38F , SNN1000L10D , ME04N25-G , ME08N20 , ME08N20-G , ME10N15 , P60NF06 , ME110N10T , ME110N10F , ME120N10T , ME120N10T-G , ME12N04 , ME12N04-G , ME12N15 , ME12N15-G .

History: IPI120N10S4-03 | FHF2N65D

Keywords - ME10N15-G MOSFET datasheet

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