ME110N10T PDF and Equivalents Search

 

ME110N10T Specs and Replacement

Type Designator: ME110N10T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 217 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 943 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO220AB

ME110N10T substitution

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ME110N10T datasheet

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 me110n10t me110n10f.pdf pdf_icon

ME110N10T

ME110N10T/ME110N10F N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 6.2m @VGS=10V The ME110N10T and ME110N10F is the N-Channel logic enhancement Super high density cell design for extremely low RDS(ON) mode power field effect transistors, using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This h... See More ⇒

Detailed specifications: SJMN60R15F , SJMN60R38F , SNN1000L10D , ME04N25-G , ME08N20 , ME08N20-G , ME10N15 , ME10N15-G , BS170 , ME110N10F , ME120N10T , ME120N10T-G , ME12N04 , ME12N04-G , ME12N15 , ME12N15-G , ME12P04 .

History: IRLL110TRPBF | IRFL9110PBF

Keywords - ME110N10T MOSFET specs

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