All MOSFET. ME110N10T Datasheet

 

ME110N10T Datasheet and Replacement


   Type Designator: ME110N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 217 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 130 nC
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 943 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO220AB
 

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ME110N10T Datasheet (PDF)

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ME110N10T

ME110N10T/ME110N10FN-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6.2m@VGS=10V The ME110N10T and ME110N10F is the N-Channel logic enhancement Super high density cell design for extremely low RDS(ON) mode power field effect transistors, using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This h

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFB3407Z | PDP0980

Keywords - ME110N10T MOSFET datasheet

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