All MOSFET. ME120N10T-G Datasheet

 

ME120N10T-G Datasheet and Replacement


   Type Designator: ME120N10T-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 1013 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO220
 

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ME120N10T-G Datasheet (PDF)

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ME120N10T-G

ME120N10T/ME120N10T-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)5.0m@VGS=10V The ME120N10T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density proce

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ME120N10T-G

ME120N04T N-Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)4m@VGS=10V The ME120N04T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density process i

Datasheet: ME04N25-G , ME08N20 , ME08N20-G , ME10N15 , ME10N15-G , ME110N10T , ME110N10F , ME120N10T , P0903BDG , ME12N04 , ME12N04-G , ME12N15 , ME12N15-G , ME12P04 , ME12P04-G , ME15N10-G , ME20N03 .

History: IRF7855 | STT3457P | IRF6644PBF | STH310N10F7-2 | IRHLNJ77034 | IRHLNM87Y20 | IRF7862

Keywords - ME120N10T-G MOSFET datasheet

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