ME120N10T-G PDF and Equivalents Search

 

ME120N10T-G Specs and Replacement

Type Designator: ME120N10T-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 1013 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO220

ME120N10T-G substitution

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ME120N10T-G datasheet

 ..1. Size:1399K  matsuki electric
 me120n10t me120n10t-g.pdf pdf_icon

ME120N10T-G

ME120N10T/ME120N10T-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5.0m @VGS=10V The ME120N10T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density proce... See More ⇒

 8.1. Size:1428K  matsuki electric
 me120n04t.pdf pdf_icon

ME120N10T-G

ME120N04T N-Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 4m @VGS=10V The ME120N04T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density process i... See More ⇒

Detailed specifications: ME04N25-G , ME08N20 , ME08N20-G , ME10N15 , ME10N15-G , ME110N10T , ME110N10F , ME120N10T , IRF1407 , ME12N04 , ME12N04-G , ME12N15 , ME12N15-G , ME12P04 , ME12P04-G , ME15N10-G , ME20N03 .

Keywords - ME120N10T-G MOSFET specs

 ME120N10T-G cross reference
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