ME120N10T-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME120N10T-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 180 nC
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 1013 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO220
ME120N10T-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME120N10T-G Datasheet (PDF)
me120n10t me120n10t-g.pdf
ME120N10T/ME120N10T-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)5.0m@VGS=10V The ME120N10T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density proce
me120n04t.pdf
ME120N04T N-Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)4m@VGS=10V The ME120N04T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density process i
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
