ME12P04 PDF and Equivalents Search

 

ME12P04 Specs and Replacement

Type Designator: ME12P04

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 18.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56 nS

Cossⓘ - Output Capacitance: 91 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TO252

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ME12P04 datasheet

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 me12p04 me12p04-g.pdf pdf_icon

ME12P04

ME12P04/ME12P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME12P04 is the P-Channel logic enhancement mode power field RDS(ON) 45m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 80m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low ... See More ⇒

Detailed specifications: ME110N10T, ME110N10F, ME120N10T, ME120N10T-G, ME12N04, ME12N04-G, ME12N15, ME12N15-G, SI2302, ME12P04-G, ME15N10-G, ME20N03, ME20N03-G, ME20N15, ME20N15-G, ME20P03, ME20P03-G

Keywords - ME12P04 MOSFET specs

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