All MOSFET. ME12P04-G Datasheet

 

ME12P04-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME12P04-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 18.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20.3 nC
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO252

 ME12P04-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME12P04-G Datasheet (PDF)

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 me12p04 me12p04-g.pdf

ME12P04-G ME12P04-G

ME12P04/ME12P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME12P04 is the P-Channel logic enhancement mode power field RDS(ON)45m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)80m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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