All MOSFET. ME12P04-G Datasheet

 

ME12P04-G Datasheet and Replacement


   Type Designator: ME12P04-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 18.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO252
 

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ME12P04-G Datasheet (PDF)

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ME12P04-G

ME12P04/ME12P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME12P04 is the P-Channel logic enhancement mode power field RDS(ON)45m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)80m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low

Datasheet: ME110N10F , ME120N10T , ME120N10T-G , ME12N04 , ME12N04-G , ME12N15 , ME12N15-G , ME12P04 , 7N60 , ME15N10-G , ME20N03 , ME20N03-G , ME20N15 , ME20N15-G , ME20P03 , ME20P03-G , ME20P06 .

History: SWD056R68E7T | APT1004R2KN

Keywords - ME12P04-G MOSFET datasheet

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