All MOSFET. IRF7303PBF Datasheet

 

IRF7303PBF Datasheet and Replacement


   Type Designator: IRF7303PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SO-8
 

 IRF7303PBF substitution

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IRF7303PBF Datasheet (PDF)

 ..1. Size:230K  international rectifier
irf7303pbf.pdf pdf_icon

IRF7303PBF

PD - 95177IRF7303PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8l Dual N-Channel MosfetS1 D1VDSS = 30Vl Surface Mount 2 7G1 D1l Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating4 5G2 D2RDS(on) = 0.050l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanc

 7.1. Size:578K  1
auirf7303q.pdf pdf_icon

IRF7303PBF

AUTOMOTIVE GRADE AUIRF7303Q VDSS Features 1 8S1 D1 30V Advanced Planar Technology 2 7G1 D1RDS(on) max. Dual N Channel MOSFET 3 6S2 D20.054 Low On-Resistance 5G2 D2ID Logic Level Gate Drive 5.3A Top View Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

 7.2. Size:111K  international rectifier
irf7303.pdf pdf_icon

IRF7303PBF

PD - 9.1239DIRF7303HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-Resistance D1S1VDSS = 30V Dual N-Channel Mosfet 2 7G1 D1 Surface Mount3 6S2 D2 Available in Tape & Reel4 5G2 D2RDS(on) = 0.050 Dynamic dv/dt Rating Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniq

 7.3. Size:833K  cn vbsemi
irf7303tr.pdf pdf_icon

IRF7303PBF

IRF7303TRwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

Datasheet: ME20N15 , ME20N15-G , ME20P03 , ME20P03-G , ME20P06 , ME20P06-G , ME2301 , ME2301-G , IRF730 , IRF7304PBF , IRF7306PBF , IRF7307PBF , IRF7309TRPBF-1 , IRF7311PBF , IRF7313PBF , IRF7314PBF , IRF7316PBF .

History: SSP5N90 | IRLZ34SPBF | SIS892DN | STB2N62K3 | SVS5N70F | WMQ048NV6LG4

Keywords - IRF7303PBF MOSFET datasheet

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