All MOSFET. STE180N10 Datasheet

 

STE180N10 Datasheet and Replacement


   Type Designator: STE180N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 230 nS
   Cossⓘ - Output Capacitance: 4000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: ISOTOP
 

 STE180N10 substitution

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STE180N10 Datasheet (PDF)

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STE180N10

STE180N10N - CHANNEL 100V - 5.5 m - 180A - ISOTOPPOWER MOSFETTYPE VDSS RDS(on) IDSTE180N10 100 V

 7.1. Size:155K  1
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STE180N10

STE180N05N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE V R IDSS DS(on) DSTE180N05 50 V

 7.2. Size:262K  st
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STE180N10

STE180NE10N-channel 100V - 4.5m - 180A - ISOTOPSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTE180NE10 100V

Datasheet: STD8N10L-1 , STD8N10LT4 , STD8N10T4 , STE100N20 , STE150N10 , STE15N100 , STE16N100 , STE180N05 , K3569 , STE22N80 , STE24N90 , STE250N05 , STE250N06 , STE26N50 , STE26NA90 , STE36N50 , STE36N50-DA .

History: AP9470GM

Keywords - STE180N10 MOSFET datasheet

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