STE180N10 Datasheet and Replacement
Type Designator: STE180N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 230 nS
Cossⓘ - Output Capacitance: 4000 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: ISOTOP
- MOSFET Cross-Reference Search
STE180N10 Datasheet (PDF)
ste180n10.pdf
STE180N10N - CHANNEL 100V - 5.5 m - 180A - ISOTOPPOWER MOSFETTYPE VDSS RDS(on) IDSTE180N10 100 V
ste180n05.pdf
STE180N05N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE V R IDSS DS(on) DSTE180N05 50 V
ste180ne10.pdf
STE180NE10N-channel 100V - 4.5m - 180A - ISOTOPSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTE180NE10 100V
Datasheet: STD8N10L-1 , STD8N10LT4 , STD8N10T4 , STE100N20 , STE150N10 , STE15N100 , STE16N100 , STE180N05 , K3569 , STE22N80 , STE24N90 , STE250N05 , STE250N06 , STE26N50 , STE26NA90 , STE36N50 , STE36N50-DA .
History: IRFR18N15D | IRFB3004GPBF | BRCS200P03DP | SWJ7N65D | UML2502G-AE3-R | TSM4424CS | LKK47-06C5
Keywords - STE180N10 MOSFET datasheet
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History: IRFR18N15D | IRFB3004GPBF | BRCS200P03DP | SWJ7N65D | UML2502G-AE3-R | TSM4424CS | LKK47-06C5
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