IRF7389PBF PDF and Equivalents Search

 ..1. Size:259K  international rectifier
 irf7389pbf.pdf

PD - 95462 IRF7389PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Complimentary Half Bridge 2 7 G1 D1 VDSS 30V -30V l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free P-CHANNEL MOSFET RDS(on) 0.029 0.058 Top View Description Fifth Generation HEXFETs from International Rectifier... See More ⇒

 0.1. Size:258K  international rectifier
 irf7389pbf-1.pdf

IRF7389PbF-1 HEXFET Power MOSFET N-CH P-CH N-CHANNEL MOSFET VDS 30 -30 V 1 8 S1 D1 RDS(on) max 2 7 G1 D1 0.029 0.058 (@V = 10V) GS 3 6 S2 D2 Qg (typical) 22 23 nC 4 5 G2 D2 ID 7.3 -5.3 A P-CHANNEL MOSFET SO-8 (@T = 25 C) A Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Tech... See More ⇒

 7.1. Size:165K  international rectifier
 irf7389.pdf

PD - 91645 IRF7389 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Complimentary Half Bridge 2 7 G1 D1 VDSS 30V -30V Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.029 0.058 Top View Description Fifth Generation HEXFETs from International Rectifier utiliz... See More ⇒

 8.1. Size:200K  international rectifier
 irf7380qpbf.pdf

PD - 96132B IRF7380QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance VDSS RDS(on) max ID l N Channel MOSFET 73m @VGS = 10V l Surface Mount 80V 2.2A l Available in Tape & Reel l 150 C Operating Temperature l Lead-Free 1 8 S1 D1 2 7 Description G1 D1 Additional features of These HEXFET Power 3 6 S2 D2 MOSFET's are a 150 C junction operating 4... See More ⇒

 8.2. Size:226K  international rectifier
 irf7380pbf.pdf

IRF7380PbF HEXFET Power MOSFET VDSS RDS(on) max ID Applications l High frequency DC-DC converters 80V 73m @VGS = 10V 3.6A l Lead-Free Benefits 1 8 S1 D1 l Low Gate to Drain Charge to Reduce 2 7 G1 D1 Switching Losses 3 6 l Fully Characterized Capacitance Including S2 D2 Effective COSS to Simplify Design, (See 4 5 G2 D2 App. Note AN1001) l Fully Characterized Avalanche Vol... See More ⇒

 8.3. Size:205K  international rectifier
 irf7380pbf-1.pdf

IRF7380TRPbF-1 HEXFET Power MOSFET VDS 80 V 1 8 S1 D1 RDS(on) max 2 7 73 m G1 D1 (@V = 10V) GS 3 6 S2 D2 Qg (typical) 15 nC 4 5 ID G2 D2 3.6 A (@T = 25 C) A Top View SO-8 Applications l High frequency DC-DC converters Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Ma... See More ⇒