IRF7389PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF7389PBF
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1(min) V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7.3 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 22 nC
trⓘ - Время нарастания: 8.9 ns
Cossⓘ - Выходная емкость: 320 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.029 Ohm
Тип корпуса: SO-8
Аналог (замена) для IRF7389PBF
IRF7389PBF Datasheet (PDF)
irf7389pbf.pdf
PD - 95462IRF7389PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-Resistance S1 D1l Complimentary Half Bridge 2 7G1 D1VDSS 30V -30Vl Surface Mount3 6S2 D2l Fully Avalanche Rated45G2 D2l Lead-FreeP-CHANNEL MOSFETRDS(on) 0.029 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifier
irf7389pbf-1.pdf
IRF7389PbF-1HEXFET Power MOSFETN-CH P-CHN-CHANNEL MOSFETVDS 30 -30 V 1 8S1 D1RDS(on) max 2 7G1 D10.029 0.058 (@V = 10V)GS3 6S2 D2Qg (typical) 22 23 nC45G2 D2ID 7.3 -5.3 A P-CHANNEL MOSFETSO-8(@T = 25C)ATop ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Tech
irf7389.pdf
PD - 91645IRF7389PRELIMINARYHEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8 Ultra Low On-Resistance S1 D1 Complimentary Half Bridge 2 7G1 D1VDSS 30V -30V Surface Mount3 6S2 D2 Fully Avalanche Rated45G2 D2P-CHANNEL MOSFETRDS(on) 0.029 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutiliz
irf7380qpbf.pdf
PD - 96132BIRF7380QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceVDSS RDS(on) max IDl N Channel MOSFET73m @VGS = 10Vl Surface Mount 80V 2.2Al Available in Tape & Reell 150C Operating Temperaturel Lead-Free1 8S1 D12 7Description G1 D1Additional features of These HEXFET Power3 6S2 D2MOSFET's are a 150C junction operating4
irf7380pbf-1.pdf
IRF7380TRPbF-1HEXFET Power MOSFETVDS 80 V1 8S1 D1RDS(on) max 2 773 mG1 D1(@V = 10V)GS3 6S2 D2Qg (typical) 15 nC4 5ID G2 D23.6 A(@T = 25C)ATop View SO-8Applicationsl High frequency DC-DC convertersFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier Ma
irf7380pbf.pdf
IRF7380PbFHEXFET Power MOSFETVDSS RDS(on) max IDApplicationsl High frequency DC-DC converters80V 73m @VGS = 10V 3.6Al Lead-FreeBenefits1 8S1 D1l Low Gate to Drain Charge to Reduce2 7G1 D1Switching Losses3 6l Fully Characterized Capacitance IncludingS2 D2Effective COSS to Simplify Design, (See 45G2 D2App. Note AN1001)l Fully Characterized Avalanche Vol
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Список транзисторов
Обновления
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