All MOSFET. IRF9389PBF Datasheet

 

IRF9389PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF9389PBF
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Maximum Power Dissipation (Pd): 2 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.3 V
   Maximum Drain Current |Id|: 6.8 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 6.8 nC
   Rise Time (tr): 4.8 nS
   Drain-Source Capacitance (Cd): 82 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.027 Ohm
   Package: SO-8

 IRF9389PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF9389PBF Datasheet (PDF)

 ..1. Size:244K  infineon
irf9389pbf.pdf

IRF9389PBF
IRF9389PBF

IRF9389PbFHEXFET Power MOSFETN-CH P-CHN-CHANNEL MOSFET1 8S1 D1VDS 30 -30 V2 7G1 D1RDS(on) max 27 64 m3 6S2 D2Qg (typical) 6.8 8.1 nC 4 5G2 D2P-CHANNEL MOSFETID Top ViewSO-86.8 -4.6 A(@TA = 25C)Applicationsl High and Low Side Switches for Inverterl High and Low Side Switches for Generic Half-BridgeFeatures BenefitsHigh and low-side MOSFETs i

 7.1. Size:244K  international rectifier
irf9389.pdf

IRF9389PBF
IRF9389PBF

IRF9389PbFHEXFET Power MOSFETN-CH P-CHN-CHANNEL MOSFET1 8S1 D1VDS 30 -30 V2 7G1 D1RDS(on) max 27 64 m3 6S2 D2Qg (typical) 6.8 8.1 nC 4 5G2 D2P-CHANNEL MOSFETID Top ViewSO-86.8 -4.6 A(@TA = 25C)Applicationsl High and Low Side Switches for Inverterl High and Low Side Switches for Generic Half-BridgeFeatures BenefitsHigh and low-side MOSFETs i

 7.2. Size:891K  cn vbsemi
irf9389tr.pdf

IRF9389PBF
IRF9389PBF

IRF9389TRwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VG

 8.1. Size:306K  international rectifier
irf9388pbf.pdf

IRF9389PBF
IRF9389PBF

PD - 97521IRF9388PbFHEXFET Power MOSFETVDS-30 VVGS max 25 VRDS(on) max 11.9 m(@VGS = -10V) ID -12 A(@TA = 25C)SO-8Applications Adaptor Input Switch for Notebook PCFeatures and BenefitsResulting BenefitsFeatures25V VGS max Direct Drive at High VGSIndustry-Standard SO8 Package Multi-Vendor CompatibilityEnvironmentally FriendlierRoHS Compliant

 8.2. Size:266K  international rectifier
irf9383mpbf.pdf

IRF9389PBF
IRF9389PBF

IRF9383MPbFDirectFET P-Channel Power MOSFET Typical values (unless otherwise specified)Applicationsl Isolation Switch for Input Power or Battery Application VDSS VGS RDS(on) RDS(on) l High Side Switch for Inverter Applications-30V max 20V max 2.3m@-10V 3.8m@-4.5VQg tot Qgd Qgs2 Qrr Qoss Vgs(th) Features and Benefits67nC 29nC 9.4nC 315nC 59nC -1.8Vl Environmental

 8.3. Size:308K  infineon
irf9388pbf.pdf

IRF9389PBF
IRF9389PBF

PD - 97521IRF9388PbFHEXFET Power MOSFETVDS-30 VVGS max 25 VRDS(on) max 11.9 m(@VGS = -10V) ID -12 A(@TA = 25C)SO-8Applications Adaptor Input Switch for Notebook PCFeatures and BenefitsResulting BenefitsFeatures25V VGS max Direct Drive at High VGSIndustry-Standard SO8 Package Multi-Vendor CompatibilityEnvironmentally FriendlierRoHS Compliant

 8.4. Size:242K  infineon
irf9383mpbf.pdf

IRF9389PBF
IRF9389PBF

IRF9383MPbFDirectFET P-Channel Power MOSFET Typical values (unless otherwise specified)Applicationsl Isolation Switch for Input Power or Battery Application VDSS VGS RDS(on) RDS(on) l High Side Switch for Inverter Applications-30V max 20V max 2.3m@-10V 3.8m@-4.5VQg tot Qgd Qgs2 Qrr Qoss Vgs(th) Features and Benefits67nC 29nC 9.4nC 315nC 59nC -1.8Vl Environmentaly

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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