IRF9389PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF9389PBF
Тип транзистора: MOSFET
Полярность: NP
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.3 V
Максимально допустимый постоянный ток стока |Id|: 6.8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 6.8 nC
Время нарастания (tr): 4.8 ns
Выходная емкость (Cd): 82 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.027 Ohm
Тип корпуса: SO-8
Аналог (замена) для IRF9389PBF
IRF9389PBF Datasheet (PDF)
irf9389pbf.pdf
IRF9389PbFHEXFET Power MOSFETN-CH P-CHN-CHANNEL MOSFET1 8S1 D1VDS 30 -30 V2 7G1 D1RDS(on) max 27 64 m3 6S2 D2Qg (typical) 6.8 8.1 nC 4 5G2 D2P-CHANNEL MOSFETID Top ViewSO-86.8 -4.6 A(@TA = 25C)Applicationsl High and Low Side Switches for Inverterl High and Low Side Switches for Generic Half-BridgeFeatures BenefitsHigh and low-side MOSFETs i
irf9389.pdf
IRF9389PbFHEXFET Power MOSFETN-CH P-CHN-CHANNEL MOSFET1 8S1 D1VDS 30 -30 V2 7G1 D1RDS(on) max 27 64 m3 6S2 D2Qg (typical) 6.8 8.1 nC 4 5G2 D2P-CHANNEL MOSFETID Top ViewSO-86.8 -4.6 A(@TA = 25C)Applicationsl High and Low Side Switches for Inverterl High and Low Side Switches for Generic Half-BridgeFeatures BenefitsHigh and low-side MOSFETs i
irf9389tr.pdf
IRF9389TRwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VG
irf9388pbf.pdf
PD - 97521IRF9388PbFHEXFET Power MOSFETVDS-30 VVGS max 25 VRDS(on) max 11.9 m(@VGS = -10V) ID -12 A(@TA = 25C)SO-8Applications Adaptor Input Switch for Notebook PCFeatures and BenefitsResulting BenefitsFeatures25V VGS max Direct Drive at High VGSIndustry-Standard SO8 Package Multi-Vendor CompatibilityEnvironmentally FriendlierRoHS Compliant
irf9383mpbf.pdf
IRF9383MPbFDirectFET P-Channel Power MOSFET Typical values (unless otherwise specified)Applicationsl Isolation Switch for Input Power or Battery Application VDSS VGS RDS(on) RDS(on) l High Side Switch for Inverter Applications-30V max 20V max 2.3m@-10V 3.8m@-4.5VQg tot Qgd Qgs2 Qrr Qoss Vgs(th) Features and Benefits67nC 29nC 9.4nC 315nC 59nC -1.8Vl Environmental
irf9388pbf.pdf
PD - 97521IRF9388PbFHEXFET Power MOSFETVDS-30 VVGS max 25 VRDS(on) max 11.9 m(@VGS = -10V) ID -12 A(@TA = 25C)SO-8Applications Adaptor Input Switch for Notebook PCFeatures and BenefitsResulting BenefitsFeatures25V VGS max Direct Drive at High VGSIndustry-Standard SO8 Package Multi-Vendor CompatibilityEnvironmentally FriendlierRoHS Compliant
irf9383mpbf.pdf
IRF9383MPbFDirectFET P-Channel Power MOSFET Typical values (unless otherwise specified)Applicationsl Isolation Switch for Input Power or Battery Application VDSS VGS RDS(on) RDS(on) l High Side Switch for Inverter Applications-30V max 20V max 2.3m@-10V 3.8m@-4.5VQg tot Qgd Qgs2 Qrr Qoss Vgs(th) Features and Benefits67nC 29nC 9.4nC 315nC 59nC -1.8Vl Environmentaly
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