All MOSFET. IRF9410PBf Datasheet

 

IRF9410PBf Datasheet and Replacement


   Type Designator: IRF9410PBf
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.3 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SO-8
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IRF9410PBf Datasheet (PDF)

 ..1. Size:170K  international rectifier
 irf9410pbf.pdf pdf_icon

IRF9410PBf

PD - 95260IRF9410PbFHEXFET Power MOSFETl Generation V TechnologyAl Ultra Low On-ResistanceA1 8S Dl N-Channel MOSFETVDSS = 30V2 7l Surface Mount S Dl Very Low Gate Charge and3 6S DSwitching Losses45G DRDS(on) = 0.030l Fully Avalanche Ratedl Lead-FreeTop ViewDescriptionRecommended upgrade: IRF7403 or IRF7413Fifth Generation HEXFETs from Int

 7.1. Size:114K  international rectifier
 irf9410.pdf pdf_icon

IRF9410PBf

PD - 9.1562AIRF9410PRELIMINARYHEXFET Power MOSFET Generation V Technology AA1 8S D Ultra Low On-ResistanceVDSS = 30V2 7 N-Channel MOSFETS D Surface Mount3 6S D Very Low Gate Charge and4 5G DSwitching Losses RDS(on) = 0.030 Fully Avalanche RatedTop ViewDescriptionRecommended upgrade: IRF7403 or IRF7413Fifth Generation HEXFETs from Internationa

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: FC694301 | DH150N12B | 12N65KG-TF1-T | AONY36352 | R5016ANJ | BSB280N15NZ3G | ELM13401CA

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