STE26N50 MOSFET. Datasheet pdf. Equivalent
Type Designator: STE26N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 26 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 1200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: ISOTOP
STE26N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STE26N50 Datasheet (PDF)
ste26n50.pdf
STE26N50N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE V R IDSS DS(on) DSTE26N50 500 V
ste26na90.pdf
STE26NA90 N - CHANNEL 900V - 0.25 - 26A - ISOTOPFAST POWER MOSFETTYPE VDSS RDS(on) IDSTE26NA90 900 V
ste26na90.pdf
STE26NA90 N - CHANNEL 900V - 0.25 - 26A - ISOTOPFAST POWER MOSFETTYPE VDSS RDS(on) IDSTE26NA90 900 V
Datasheet: STE15N100 , STE16N100 , STE180N05 , STE180N10 , STE22N80 , STE24N90 , STE250N05 , STE250N06 , IRFP260 , STE26NA90 , STE36N50 , STE36N50-DA , STE36N50-DK , STE38N60 , STE38NA50 , STE40N55 , STE45N50 .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918