STE26N50 Specs and Replacement
Type Designator: STE26N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 1200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: ISOTOP
STE26N50 substitution
- MOSFET ⓘ Cross-Reference Search
STE26N50 datasheet
ste26n50.pdf
STE26N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V R I DSS DS(on) D STE26N50 500 V ... See More ⇒
ste26na90.pdf
STE26NA90 N - CHANNEL 900V - 0.25 - 26A - ISOTOP FAST POWER MOSFET TYPE VDSS RDS(on) ID STE26NA90 900 V ... See More ⇒
ste26na90.pdf
STE26NA90 N - CHANNEL 900V - 0.25 - 26A - ISOTOP FAST POWER MOSFET TYPE VDSS RDS(on) ID STE26NA90 900 V ... See More ⇒
Detailed specifications: STE15N100 , STE16N100 , STE180N05 , STE180N10 , STE22N80 , STE24N90 , STE250N05 , STE250N06 , IRF9540N , STE26NA90 , STE36N50 , STE36N50-DA , STE36N50-DK , STE38N60 , STE38NA50 , STE40N55 , STE45N50 .
History: STH4N80FI | STP6NK90Z
Keywords - STE26N50 MOSFET specs
STE26N50 cross reference
STE26N50 equivalent finder
STE26N50 pdf lookup
STE26N50 substitution
STE26N50 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: STH4N80FI | STP6NK90Z
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