All MOSFET. STE26N50 Datasheet

 

STE26N50 Datasheet and Replacement


   Type Designator: STE26N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: ISOTOP
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STE26N50 Datasheet (PDF)

 ..1. Size:153K  1
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STE26N50

STE26N50N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE V R IDSS DS(on) DSTE26N50 500 V

 8.1. Size:95K  1
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STE26N50

STE26NA90 N - CHANNEL 900V - 0.25 - 26A - ISOTOPFAST POWER MOSFETTYPE VDSS RDS(on) IDSTE26NA90 900 V

 8.2. Size:92K  st
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STE26N50

STE26NA90 N - CHANNEL 900V - 0.25 - 26A - ISOTOPFAST POWER MOSFETTYPE VDSS RDS(on) IDSTE26NA90 900 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMM11N80M3 | RFP2N10L | IRFI7536G | AM2314NE | FDMS9620S

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