All MOSFET. STE26N50 Datasheet

 

STE26N50 Datasheet and Replacement


   Type Designator: STE26N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: ISOTOP
 

 STE26N50 substitution

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STE26N50 Datasheet (PDF)

 ..1. Size:153K  1
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STE26N50

STE26N50N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE V R IDSS DS(on) DSTE26N50 500 V

 8.1. Size:95K  1
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STE26N50

STE26NA90 N - CHANNEL 900V - 0.25 - 26A - ISOTOPFAST POWER MOSFETTYPE VDSS RDS(on) IDSTE26NA90 900 V

 8.2. Size:92K  st
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STE26N50

STE26NA90 N - CHANNEL 900V - 0.25 - 26A - ISOTOPFAST POWER MOSFETTYPE VDSS RDS(on) IDSTE26NA90 900 V

Datasheet: STE15N100 , STE16N100 , STE180N05 , STE180N10 , STE22N80 , STE24N90 , STE250N05 , STE250N06 , IRF1010E , STE26NA90 , STE36N50 , STE36N50-DA , STE36N50-DK , STE38N60 , STE38NA50 , STE40N55 , STE45N50 .

History: SSN1N45BTA

Keywords - STE26N50 MOSFET datasheet

 STE26N50 cross reference
 STE26N50 equivalent finder
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