IRFH7084PBF MOSFET Datasheet: N-Ch, 40V, 100A. Full specification with pinout and replacement list

IRFH7084PBF Specs and Replacement

Type Designator: IRFH7084PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 940 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00125 Ohm

Package: PQFN5X6

IRFH7084PBF substitution

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IRFH7084PBF datasheet

..1. Size:748K infineon
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StrongIRFET IRFH7084PbF Application HEXFET Power MOSFET Half-bridge and full-bridge topologies Synchronous rectifier applications VDSS 40V Resonant mode power supplies DC/DC converters RDS(on) typ. 0.95m DC/AC Inverters 1.25m max ID (Silicon Limited) 265A ID (Package Limited) 100A Benefits Improved Ga... See More ⇒

6.1. Size:706K international rectifier
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7.1. Size:502K 1
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StrongIRFET IRFH7085PbF HEXFET Power MOSFET Application VDSS 60V Half-bridge and full-bridge topologies Synchronous rectifier applications RDS(on) typ. 2.6m Resonant mode power supplies DC/DC converters max 3.2m DC/AC Inverters ID (Silicon Limited) 147A ID (Package Limited) 100A Benefits Improved Gate, A... See More ⇒

7.2. Size:502K international rectifier
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