IRFU3710Z-701PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFU3710Z-701PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 42 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 69 nC
trⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 290 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO251
IRFU3710Z-701PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFU3710Z-701PBF Datasheet (PDF)
irfr3710zpbf irfu3710zpbf irfu3710z-701pbf.pdf
PD - 95513DIRFR3710ZPbFIRFU3710ZPbFIRFU3710Z-701PbFFeaturesl Advanced Process Technology HEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 100Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18ml Multiple Package OptionsGl Lead-FreeID = 42ADescription SThis HEXFET Power MOSFET utilizes thelatest pro
irfu3710z.pdf
PD - 94740AIRFR3710ZAUTOMOTIVE MOSFETIRFU3710ZHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 100Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 18ml Fast SwitchingGl Repetitive Avalanche Allowed up to TjmaxID = 42ASDescriptionSpecifically designed for Automotive applications, this HEXFETPower MOSFET utilizes the lat
irfu3710z.pdf
isc N-Channel MOSFET Transistor IRFU3710ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BSP75G
History: BSP75G
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