IRFU3710Z-701PBF - аналоги, параметры транзистора

IRFU3710Z-701PBF даташит

0.1. Size:359K international rectifier
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PD - 95513D IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18m l Multiple Package Options G l Lead-Free ID = 42A Description S This HEXFET Power MOSFET utilizes the latest pro

5.1. Size:728K international rectifier
irfu3710z.pdf pdf_icon

PD - 94740A IRFR3710Z AUTOMOTIVE MOSFET IRFU3710Z HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 100V l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) = 18m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 42A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the lat

5.2. Size:261K inchange semiconductor
irfu3710z.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFU3710Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

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