All MOSFET. ISP12DP06NM Datasheet

 

ISP12DP06NM Datasheet and Replacement


   Type Designator: ISP12DP06NM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: SOT223
 

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ISP12DP06NM Datasheet (PDF)

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ISP12DP06NM

ISP12DP06NMMOSFETSOT-223-4OptiMOSTM Small Signal Transistor, -60 VFeatures 4 P-Channel Very low on-resistance RDS(on) 100% avalanche tested Normal Level1 Enhancement mode2 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 3Product validationFully qualified according to JEDEC for Industrial ApplicationsDrainPin 2

Datasheet: IRL40T209 , IRL530NPBF , IRL540NLPBF , IRL60HS118 , IRL60SC216 , IRL80HS120 , IRLI530NPBF , IRLU9343-701PBF , AO3407 , ISP25DP06LM , ISP25DP06LMS , ISP25DP06NM , ISP75DP06LM , ISS17EP06LM , ISZ019N03L5S , ISZ040N03L5IS , ISZ0501NLS .

History: KO3407 | SI4948BEY-T1-E3 | STT4443 | NCE40P25G | TPA60R160M | SSFM3008L | WMK08N60C4

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