ISP75DP06LM Specs and Replacement
Type Designator: ISP75DP06LM
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 19 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: SOT223
ISP75DP06LM substitution
- MOSFET ⓘ Cross-Reference Search
ISP75DP06LM datasheet
isp75dp06lm.pdf
ISP75DP06LM MOSFET SOT-223-4 OptiMOSTM Small Signal Transistor, -60 V Features 4 P-Channel Very low on-resistance R @ V =4.5 V DS(on) GS 100% avalanche tested Logic Level 1 Enhancement mode 2 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 3 Product validation Fully qualified according to JEDEC for Industrial Applications ... See More ⇒
Detailed specifications: IRL60SC216, IRL80HS120, IRLI530NPBF, IRLU9343-701PBF, ISP12DP06NM, ISP25DP06LM, ISP25DP06LMS, ISP25DP06NM, IRF730, ISS17EP06LM, ISZ019N03L5S, ISZ040N03L5IS, ISZ0501NLS, ISZ065N03L5S, ISZ0901NLS, SIHFP450A, SIHFP450LC
Keywords - ISP75DP06LM MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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