All MOSFET. ISP75DP06LM Datasheet

 

ISP75DP06LM Datasheet and Replacement


   Type Designator: ISP75DP06LM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: SOT223
 

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ISP75DP06LM Datasheet (PDF)

 ..1. Size:1169K  infineon
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ISP75DP06LM

ISP75DP06LMMOSFETSOT-223-4OptiMOSTM Small Signal Transistor, -60 VFeatures 4 P-Channel Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Logic Level1 Enhancement mode2 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 3Product validationFully qualified according to JEDEC for Industrial Applications

Datasheet: IRL60SC216 , IRL80HS120 , IRLI530NPBF , IRLU9343-701PBF , ISP12DP06NM , ISP25DP06LM , ISP25DP06LMS , ISP25DP06NM , BS170 , ISS17EP06LM , ISZ019N03L5S , ISZ040N03L5IS , ISZ0501NLS , ISZ065N03L5S , ISZ0901NLS , SIHFP450A , SIHFP450LC .

History: PTN3006

Keywords - ISP75DP06LM MOSFET datasheet

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