ISZ0901NLS MOSFET. Datasheet pdf. Equivalent
Type Designator: ISZ0901NLS
Marking Code: 0901NL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 26 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.4 nC
trⓘ - Rise Time: 2.2 nS
Cossⓘ - Output Capacitance: 290 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TSDSON-8FL
ISZ0901NLS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ISZ0901NLS Datasheet (PDF)
isz0901nls.pdf
ISZ0901NLSMOSFETTSDSON-8 FLOptiMOSTM Power-MOSFET, 25 V(enlarged source interconnection)Features Optimized for Charger applications Very Low FOM for High Frequency SMPSQOSS Low FOM for High Frequency SMPSSW Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Superior thermal resista
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: IPD090N03LGE8177 | HU60N03 | SPN4412WS8RG
History: IPD090N03LGE8177 | HU60N03 | SPN4412WS8RG
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918