ISZ0901NLS Specs and Replacement
Type Designator: ISZ0901NLS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 26 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.2 nS
Cossⓘ - Output Capacitance: 290 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TSDSON-8FL
ISZ0901NLS substitution
- MOSFET ⓘ Cross-Reference Search
ISZ0901NLS datasheet
isz0901nls.pdf
ISZ0901NLS MOSFET TSDSON-8 FL OptiMOSTM Power-MOSFET, 25 V (enlarged source interconnection) Features Optimized for Charger applications Very Low FOM for High Frequency SMPS QOSS Low FOM for High Frequency SMPS SW Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R @ V =4.5 V DS(on) GS 100% avalanche tested Superior thermal resista... See More ⇒
Detailed specifications: ISP25DP06LMS, ISP25DP06NM, ISP75DP06LM, ISS17EP06LM, ISZ019N03L5S, ISZ040N03L5IS, ISZ0501NLS, ISZ065N03L5S, IRF540N, SIHFP450A, SIHFP450LC, SIHFP460LC, LPM2301B3F, LPM2302B3F, LPM3401, LPM3406B3F, LPM3400B3F
Keywords - ISZ0901NLS MOSFET specs
ISZ0901NLS cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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