All MOSFET. ISZ0901NLS Datasheet

 

ISZ0901NLS Datasheet and Replacement


   Type Designator: ISZ0901NLS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2.2 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TSDSON-8FL
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ISZ0901NLS Datasheet (PDF)

 ..1. Size:903K  infineon
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ISZ0901NLS

ISZ0901NLSMOSFETTSDSON-8 FLOptiMOSTM Power-MOSFET, 25 V(enlarged source interconnection)Features Optimized for Charger applications Very Low FOM for High Frequency SMPSQOSS Low FOM for High Frequency SMPSSW Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Superior thermal resista

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: PHP3N50E | ME50N02-G | IRF3708PBF | AP2852GO | IXFH110N10P | RSE002P03TL | 2SK1217-01R

Keywords - ISZ0901NLS MOSFET datasheet

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