All MOSFET. ISZ0901NLS Datasheet

 

ISZ0901NLS MOSFET. Datasheet pdf. Equivalent


   Type Designator: ISZ0901NLS
   Marking Code: 0901NL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.4 nC
   trⓘ - Rise Time: 2.2 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TSDSON-8FL

 ISZ0901NLS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ISZ0901NLS Datasheet (PDF)

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isz0901nls.pdf

ISZ0901NLS
ISZ0901NLS

ISZ0901NLSMOSFETTSDSON-8 FLOptiMOSTM Power-MOSFET, 25 V(enlarged source interconnection)Features Optimized for Charger applications Very Low FOM for High Frequency SMPSQOSS Low FOM for High Frequency SMPSSW Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Superior thermal resista

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: IPD090N03LGE8177 | HU60N03 | SPN4412WS8RG

 

 
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