All MOSFET. LPM2301B3F Datasheet

 

LPM2301B3F Datasheet and Replacement


   Type Designator: LPM2301B3F
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT23
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LPM2301B3F Datasheet (PDF)

 ..1. Size:229K  lowpower
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LPM2301B3F

Preliminary Datasheet LPM2301 LPM2301 -20V/-2A P-Channel Enhancement Mode Field Effect Transistor General Description Features -20V/-2.0A,RDS(ON)=170m(typ.)@VGS=-2.5V The LPM2301 is the P-channel logic enhancement -20V/-2.0A,RDS(ON)=130m(typ.)@VGS=-4.5V mode power field effect transistors are produced Super high density cell design for extremely low using high

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LPM2301B3F

Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM2302 is N-channel logic enhancement mode 20V/3.5A, RDS(ON)=50m(Typ.)@VGS=4.5V power field effect transistor, which are produced by 20V/3.0A, R =75m(Typ.)@V =2.5V DS(ON) GSusing high cell density, DMOS trench technology. Sup

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History: WMM11N80M3 | FDMS9620S | AM2314NE | RFP2N10L | IRFI7536G

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