LPM4953 PDF and Equivalents Search

 

LPM4953 Specs and Replacement

Type Designator: LPM4953

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 132 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOP8

LPM4953 substitution

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LPM4953 datasheet

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 lpm4953.pdf pdf_icon

LPM4953

Preliminary Datasheet LPM4953 Dual P -Channel Enhancement Power MOSFET General Description Features The LPM4953 integrates two P-Channel enhancement Trench Technology MOSFET Transistor. It uses advanced trench PMOS V =-15V DS technology and design to provide excellent R R ... See More ⇒

Detailed specifications: SIHFP450LC, SIHFP460LC, LPM2301B3F, LPM2302B3F, LPM3401, LPM3406B3F, LPM3400B3F, LPM3413, IRFP260N, LPM8205B6F, LPM8205TSF, LPM9021QVF, LPM9029C, LPM9030, LPM9031SOF, LPM9031QVF, LPM9033QVF

Keywords - LPM4953 MOSFET specs

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