All MOSFET. LPM4953 Datasheet

 

LPM4953 Datasheet and Replacement


   Type Designator: LPM4953
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOP8
 

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LPM4953 Datasheet (PDF)

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LPM4953

Preliminary Datasheet LPM4953 Dual P -Channel Enhancement Power MOSFET General Description Features The LPM4953 integrates two P-Channel enhancement Trench Technology MOSFET Transistor. It uses advanced trench PMOS: V =-15V DStechnology and design to provide excellent R R

Datasheet: SIHFP450LC , SIHFP460LC , LPM2301B3F , LPM2302B3F , LPM3401 , LPM3406B3F , LPM3400B3F , LPM3413 , 10N60 , LPM8205B6F , LPM8205TSF , LPM9021QVF , LPM9029C , LPM9030 , LPM9031SOF , LPM9031QVF , LPM9033QVF .

History: STB75N20 | HYG065N07NS1P

Keywords - LPM4953 MOSFET datasheet

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