All MOSFET. LPM4953 Datasheet

 

LPM4953 Datasheet and Replacement


   Type Designator: LPM4953
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOP8
 

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LPM4953 Datasheet (PDF)

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LPM4953

Preliminary Datasheet LPM4953 Dual P -Channel Enhancement Power MOSFET General Description Features The LPM4953 integrates two P-Channel enhancement Trench Technology MOSFET Transistor. It uses advanced trench PMOS: V =-15V DStechnology and design to provide excellent R R

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: KDS4953 | HUF75531SK8T | DHI029N08 | TPA60R530M | HUFA75343S3ST | IPB530N15N3G

Keywords - LPM4953 MOSFET datasheet

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