All MOSFET. LPM8205B6F Datasheet

 

LPM8205B6F Datasheet and Replacement


   Type Designator: LPM8205B6F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SOT23-6
 

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LPM8205B6F Datasheet (PDF)

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LPM8205B6F

Preliminary Datasheet LPM8205 Dual N -Channel Enhancement Power MOSFET General Description Features 100% EAS Guaranteed The LPM8205 integrates two N-Channel Green Device Available EnhancementMOSFET Transistor. It uses advanced trenchtechnology and design to provide Super Low Gate Charge excellentR with lowgate charge. This device is DS(ON) Excellent CdV/dt e

Datasheet: SIHFP460LC , LPM2301B3F , LPM2302B3F , LPM3401 , LPM3406B3F , LPM3400B3F , LPM3413 , LPM4953 , IRF3710 , LPM8205TSF , LPM9021QVF , LPM9029C , LPM9030 , LPM9031SOF , LPM9031QVF , LPM9033QVF , LPM9040A .

History: KTK598V | SIR818DP | BRCS7002K2ZK | SSF4031C1 | SD5402CY | 2N7288R | WMB040N08HGS

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