LPM8205B6F PDF and Equivalents Search

 

LPM8205B6F Specs and Replacement

Type Designator: LPM8205B6F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: SOT23-6

LPM8205B6F substitution

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LPM8205B6F datasheet

 ..1. Size:1172K  lowpower
 lpm8205b6f lpm8205tsf.pdf pdf_icon

LPM8205B6F

Preliminary Datasheet LPM8205 Dual N -Channel Enhancement Power MOSFET General Description Features 100% EAS Guaranteed The LPM8205 integrates two N-Channel Green Device Available EnhancementMOSFET Transistor. It uses advanced trenchtechnology and design to provide Super Low Gate Charge excellentR with lowgate charge. This device is DS(ON) Excellent CdV/dt e... See More ⇒

Detailed specifications: SIHFP460LC, LPM2301B3F, LPM2302B3F, LPM3401, LPM3406B3F, LPM3400B3F, LPM3413, LPM4953, AO3400, LPM8205TSF, LPM9021QVF, LPM9029C, LPM9030, LPM9031SOF, LPM9031QVF, LPM9033QVF, LPM9040A

Keywords - LPM8205B6F MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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