All MOSFET. LPM8205B6F Datasheet

 

LPM8205B6F MOSFET. Datasheet pdf. Equivalent


   Type Designator: LPM8205B6F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 7.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.5 nC
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SOT23-6

 LPM8205B6F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LPM8205B6F Datasheet (PDF)

 ..1. Size:1172K  lowpower
 lpm8205b6f lpm8205tsf.pdf

LPM8205B6F LPM8205B6F

Preliminary Datasheet LPM8205 Dual N -Channel Enhancement Power MOSFET General Description Features 100% EAS Guaranteed The LPM8205 integrates two N-Channel Green Device Available EnhancementMOSFET Transistor. It uses advanced trenchtechnology and design to provide Super Low Gate Charge excellentR with lowgate charge. This device is DS(ON) Excellent CdV/dt e

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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