LPM9435 MOSFET. Datasheet pdf. Equivalent
Type Designator: LPM9435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5.3 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 132 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: SOP8
LPM9435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LPM9435 Datasheet (PDF)
..1. Size:574K lowpower
lpm9435.pdf
lpm9435.pdf
Preliminary Datasheet LPM9435 P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM9435 is the P-channel logic enhancement -30V/-5.8A,R =42m(typ.)@VGS=-10V DS(ON)mode power field effect transistors are produced using -30V/-4.0A,R =65m(typ.)@VGS=-4.5V DS(ON)high cell density, DMOS trench technology. This high Super high density ce
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