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LPM9435 Specs and Replacement

Type Designator: LPM9435

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 132 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: SOP8

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LPM9435 datasheet

 ..1. Size:574K  lowpower
 lpm9435.pdf pdf_icon

LPM9435

Preliminary Datasheet LPM9435 P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM9435 is the P-channel logic enhancement -30V/-5.8A,R =42m (typ.)@VGS=-10V DS(ON) mode power field effect transistors are produced using -30V/-4.0A,R =65m (typ.)@VGS=-4.5V DS(ON) high cell density, DMOS trench technology. This high Super high density ce... See More ⇒

Detailed specifications: LPM9021QVF, LPM9029C, LPM9030, LPM9031SOF, LPM9031QVF, LPM9033QVF, LPM9040A, LPM9042, IRFP250N, LPM9926SOF, 2KJ7107DFN, 2KK5016, AO6401-HF, FDC2512-HF, FDC3612-HF, KI2302, KI2303

Keywords - LPM9435 MOSFET specs

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