LPM9435 Datasheet and Replacement
Type Designator: LPM9435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 132 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: SOP8
LPM9435 substitution
LPM9435 Datasheet (PDF)
lpm9435.pdf

Preliminary Datasheet LPM9435 P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM9435 is the P-channel logic enhancement -30V/-5.8A,R =42m(typ.)@VGS=-10V DS(ON)mode power field effect transistors are produced using -30V/-4.0A,R =65m(typ.)@VGS=-4.5V DS(ON)high cell density, DMOS trench technology. This high Super high density ce
Datasheet: LPM9021QVF , LPM9029C , LPM9030 , LPM9031SOF , LPM9031QVF , LPM9033QVF , LPM9040A , LPM9042 , AON7408 , LPM9926SOF , 2KJ7107DFN , 2KK5016 , AO6401-HF , FDC2512-HF , FDC3612-HF , KI2302 , KI2303 .
History: NCE15H10 | HMS8N70D | MTD20P03HDLT4 | IRFF9133 | WSE3088 | IXTQ100N25P | 2SK959
Keywords - LPM9435 MOSFET datasheet
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History: NCE15H10 | HMS8N70D | MTD20P03HDLT4 | IRFF9133 | WSE3088 | IXTQ100N25P | 2SK959



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