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KO6601 Specs and Replacement

Type Designator: KO6601

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.5 nS

Cossⓘ - Output Capacitance: 45 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT23-6

KO6601 substitution

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KO6601 datasheet

 ..1. Size:354K  kexin
ao6601 ko6601.pdf pdf_icon

KO6601

SMD Type MOSFET Complementary Trench MOSFET AO6601 (KO6601) ( ) SOT-23-6 +0.1 0.4 -0.1 Features 6 5 4 N-Channel VDS (V) = 30V ID = 3.4 A (VGS = 10V) RDS(ON) 60m (VGS = 10V) 2 3 1 RDS(ON) 70m (VGS = 4.5V) +0.01 -0.01 RDS(ON) 90m (VGS = 2.5V) +0.2 -0.1 P-Channel VDS (V) = -30V ID = -2.3 A (VGS = 10V) 4 D2 1 G1 RDS... See More ⇒

 9.1. Size:3581K  kexin
ao6604 ko6604.pdf pdf_icon

KO6601

SMD Type MOSFET Complementary Trench MOSFET AO6604 (KO6604) ( ) SOT-23-6 Unit mm Features 0.4+0.1 -0.1 N-Channel VDS=20V ID=3.4A 6 5 4 RDS(ON) 65m (VGS = 4.5V) RDS(ON) 75m (VGS = 2.5V) RDS(ON) 100m (VGS = 1.8V) P-Channel VDS=-20V ID=-2.5A 2 3 1 RDS(ON) 75m (VGS =-4.5V) +0.02 0.15 -0.02 +0.01 -0.01 RDS(ON) 95m (VGS =-2.5V) +0... See More ⇒

Detailed specifications: KI2302, KI2303, KI2308DS, KI2312, KI2323, KI4435DY, KO3415, KO6401-HF, SKD502T, KO6604, KRlML2402, KRLML6401, ME2302, ME2306A, ME2306A-G, ME2306D, ME2306D-G

Keywords - KO6601 MOSFET specs

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