All MOSFET. STH10NA50 Datasheet

 

STH10NA50 Datasheet and Replacement


   Type Designator: STH10NA50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO218
 

 STH10NA50 substitution

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STH10NA50 Datasheet (PDF)

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 sth10na50.pdf pdf_icon

STH10NA50

STH10NA50/FISTW10NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTH10NA50 500 V

 8.1. Size:337K  st
 stw10nc60 sth10nc60fi.pdf pdf_icon

STH10NA50

STW10NC60STH10NC60FIN-CHANNEL 600V - 0.6 - 10A - TO-247/ISOWATT218PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTW10NC60 600 V

 8.2. Size:243K  st
 sth10n.pdf pdf_icon

STH10NA50

STH10NA50/FISTW10NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTH10NA50 500 V

 9.1. Size:437K  semtech
 sth1061.pdf pdf_icon

STH10NA50

ST H1061 NPN Plastic Power Transistor Low frequency power amplifier TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Emitter Voltage VCEO 50 V Collector Base Voltage VCBO 50 VEmitter Base Voltage VEBO 4 VCollector Current IC 3 APower Dissipation Ptot 25 WOJunction Temperature Tj 150 C OStorage Temperature Range TS -45

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Datasheet: STE38N60 , STE38NA50 , STE40N55 , STE45N50 , STE47N50 , STE50N40 , STE53NA50 , STE90N25 , IRF4905 , STH10NA50FI , STH12N60 , STH12N60FI , STH12NA60 , STH12NA60FI , STH14N50 , STH14N50FI , STH15N50 .

History: IPB117N20NFD | NP90N03VLG | QM2401D | MMIX1F210N30P3 | ZXMN6A09K | IRF9640

Keywords - STH10NA50 MOSFET datasheet

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