STH10NA50 Datasheet and Replacement
Type Designator: STH10NA50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
|Id| ⓘ - Maximum Drain Current: 9.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 56 nC
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO218
STH10NA50 substitution
STH10NA50 Datasheet (PDF)
sth10na50.pdf
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sth1061.pdf
ST H1061 NPN Plastic Power Transistor Low frequency power amplifier TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Emitter Voltage VCEO 50 V Collector Base Voltage VCBO 50 VEmitter Base Voltage VEBO 4 VCollector Current IC 3 APower Dissipation Ptot 25 WOJunction Temperature Tj 150 C OStorage Temperature Range TS -45
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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