ME2333 Datasheet. Specs and Replacement

Type Designator: ME2333  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29.8 nS

Cossⓘ - Output Capacitance: 141 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOT-23

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ME2333 datasheet

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 me2333 me2333-g.pdf pdf_icon

ME2333

ME2333/ME2333-G P-Channel 20V (D-S) MOSFET MOSFET GENERAL DESCRIPTION FEATURES The ME2333 is the P-Channel logic enhancement mode power field RDS(ON) 35m @VGS=-4.5V effect transistors are produced using high cell density, DMOS trench RDS(ON) 49m @VGS=-2.5V technology. This high density process is especially tailored to RDS(ON) 69m @VGS=-1.8V minimize on-st... See More ⇒

Detailed specifications: ME2323D, ME2323D-G, ME2325, ME2325-G, ME2326A, ME2326A-G, ME2328, ME2328-G, STF13NM60N, ME2333-G, ME2345A, ME2345A-G, ME25N06, ME25N06-G, ME2602, ME2602-G, ME2604

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