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ME2333 Specs and Replacement


   Type Designator: ME2333
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 29.8 nS
   Cossⓘ - Output Capacitance: 141 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOT-23
 

 ME2333 substitution

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ME2333 datasheet

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 me2333 me2333-g.pdf pdf_icon

ME2333

ME2333/ME2333-G P-Channel 20V (D-S) MOSFET MOSFET GENERAL DESCRIPTION FEATURES The ME2333 is the P-Channel logic enhancement mode power field RDS(ON) 35m @VGS=-4.5V effect transistors are produced using high cell density, DMOS trench RDS(ON) 49m @VGS=-2.5V technology. This high density process is especially tailored to RDS(ON) 69m @VGS=-1.8V minimize on-st... See More ⇒

Detailed specifications: ME2323D , ME2323D-G , ME2325 , ME2325-G , ME2326A , ME2326A-G , ME2328 , ME2328-G , SI2302 , ME2333-G , ME2345A , ME2345A-G , ME25N06 , ME25N06-G , ME2602 , ME2602-G , ME2604 .

History: IXTY1R4N100P | JMSL1006AGQ | PMZ1200UPE | AM7401P | 2SK1827 | FDH3632

Keywords - ME2333 MOSFET specs

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