All MOSFET. ME2333-G Datasheet

 

ME2333-G Datasheet and Replacement


   Type Designator: ME2333-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29.8 nS
   Cossⓘ - Output Capacitance: 141 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOT-23
 

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ME2333-G Datasheet (PDF)

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ME2333-G

ME2333/ME2333-G P-Channel 20V (D-S) MOSFET MOSFET GENERAL DESCRIPTION FEATURES The ME2333 is the P-Channel logic enhancement mode power field RDS(ON)35m@VGS=-4.5V effect transistors are produced using high cell density, DMOS trench RDS(ON)49m@VGS=-2.5V technology. This high density process is especially tailored to RDS(ON)69m@VGS=-1.8V minimize on-st

Datasheet: ME2323D-G , ME2325 , ME2325-G , ME2326A , ME2326A-G , ME2328 , ME2328-G , ME2333 , 7N60 , ME2345A , ME2345A-G , ME25N06 , ME25N06-G , ME2602 , ME2602-G , ME2604 , ME2604-G .

Keywords - ME2333-G MOSFET datasheet

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