STH10NA50FI Datasheet and Replacement
Type Designator: STH10NA50FI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: ISOWATT218
STH10NA50FI substitution
STH10NA50FI Datasheet (PDF)
sth10na50.pdf
STH10NA50/FISTW10NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTH10NA50 500 V
stw10nc60 sth10nc60fi.pdf
STW10NC60STH10NC60FIN-CHANNEL 600V - 0.6 - 10A - TO-247/ISOWATT218PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTW10NC60 600 V
sth10n.pdf
STH10NA50/FISTW10NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTH10NA50 500 V
Datasheet: STE38NA50 , STE40N55 , STE45N50 , STE47N50 , STE50N40 , STE53NA50 , STE90N25 , STH10NA50 , TK10A60D , STH12N60 , STH12N60FI , STH12NA60 , STH12NA60FI , STH14N50 , STH14N50FI , STH15N50 , STH15N50FI .
History: FTK50N10P | SLH60R043E7D | IXFX90N30 | IXFK52N30Q | FDM40R120AN4G | SLH95R130GTZ | MDP2N60TH
Keywords - STH10NA50FI MOSFET datasheet
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History: FTK50N10P | SLH60R043E7D | IXFX90N30 | IXFK52N30Q | FDM40R120AN4G | SLH95R130GTZ | MDP2N60TH
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