All MOSFET. ME25N06-G Datasheet

 

ME25N06-G Datasheet and Replacement


   Type Designator: ME25N06-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm
   Package: TO-252
 

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ME25N06-G Datasheet (PDF)

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 me25n06 me25n06-g.pdf pdf_icon

ME25N06-G

ME25N06/ME25N06-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)62m@VGS=10VThe ME25N06 is the N-Channel logic enhancement mode power RDS(ON)86m@VGS=4.5Vfield effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON)trench technology. This high density process is especially tailored

 9.1. Size:2213K  matsuki electric
 me25n15al me25n15al-g.pdf pdf_icon

ME25N06-G

ME25N15AL/ME25N15AL-G N- Channel 150V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME25N15AL is the N-Channel logic enhancement mode power RDS(ON) 78m@VGS=10Vfield effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON)trench technology. This high density process is especially tailored to Exceptional on-r

Datasheet: ME2326A-G , ME2328 , ME2328-G , ME2333 , ME2333-G , ME2345A , ME2345A-G , ME25N06 , IRFB31N20D , ME2602 , ME2602-G , ME2604 , ME2604-G , ME2612 , ME2612-G , ME2N7002D , ME2N7002E .

History: TPCA8082 | FIR4N70FG | HY4504B6 | RJK1212DNS | SSM6L35FU | AOD4100 | 2SK1658

Keywords - ME25N06-G MOSFET datasheet

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 ME25N06-G equivalent finder
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