ME2612-G MOSFET Datasheet: N-Ch, 150V, 2.2A. Full specification with pinout and replacement list

ME2612-G Specs and Replacement

Type Designator: ME2612-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.3 nS

Cossⓘ - Output Capacitance: 69 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.375 Ohm

Package: SOT-223

ME2612-G substitution

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ME2612-G datasheet

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ME2612/ME2612-G N-Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 375m @VGS=10V The ME2612 is the N-Channel logic enhancement mode power RDS(ON) 390m @VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially ta... See More ⇒

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ME2614/ME2614-G N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2614 is the N-Channel logic enhancement mode power RDS(ON) 166m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 213m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(... See More ⇒

Detailed specifications: ME2345A-G, ME25N06, ME25N06-G, ME2602, ME2602-G, ME2604, ME2604-G, ME2612, 75N75, ME2N7002D, ME2N7002E, ME3205T, ME3205T-G, ME3587, ME35N06, ME35N06-G, ME35N10