All MOSFET. ME2612-G Datasheet

 

ME2612-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME2612-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18.3 nC
   trⓘ - Rise Time: 4.3 nS
   Cossⓘ - Output Capacitance: 69 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.375 Ohm
   Package: SOT-223

 ME2612-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME2612-G Datasheet (PDF)

 ..1. Size:983K  matsuki electric
 me2612 me2612-g.pdf

ME2612-G ME2612-G

ME2612/ME2612-G N-Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)375m@VGS=10V The ME2612 is the N-Channel logic enhancement mode power RDS(ON)390m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially ta

 9.1. Size:1152K  matsuki electric
 me2614 me2614-g.pdf

ME2612-G ME2612-G

ME2614/ME2614-G N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2614 is the N-Channel logic enhancement mode power RDS(ON)166m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)213m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BSH207 | FK20SM-6

 

 
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