All MOSFET. ME2612-G Datasheet

 

ME2612-G Datasheet and Replacement


   Type Designator: ME2612-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.3 nS
   Cossⓘ - Output Capacitance: 69 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.375 Ohm
   Package: SOT-223
 

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ME2612-G Datasheet (PDF)

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ME2612-G

ME2612/ME2612-G N-Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)375m@VGS=10V The ME2612 is the N-Channel logic enhancement mode power RDS(ON)390m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially ta

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ME2612-G

ME2614/ME2614-G N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2614 is the N-Channel logic enhancement mode power RDS(ON)166m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)213m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

Datasheet: ME2345A-G , ME25N06 , ME25N06-G , ME2602 , ME2602-G , ME2604 , ME2604-G , ME2612 , IRF520 , ME2N7002D , ME2N7002E , ME3205T , ME3205T-G , ME3587 , ME35N06 , ME35N06-G , ME35N10 .

History: IPD060N03L | HCS70R180S

Keywords - ME2612-G MOSFET datasheet

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 ME2612-G equivalent finder
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