All MOSFET. ME2N7002D Datasheet

 

ME2N7002D Datasheet and Replacement


   Type Designator: ME2N7002D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 10(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: SOT-23
 

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ME2N7002D Datasheet (PDF)

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ME2N7002D

ME2N7002D N-Channel MOSFET ESD ProtectedGENERAL DESCRIPTION FEATURES Simple Drive Requirement The ME2N7002D is the N-Channel logic enhancement mode power Small Package Outline field effect transistors are produced using high cell density , DMOS ROHS Compliant trench technology. This high density process is especially tailored to ESD Rating = 2000V HBM min

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ME2N7002D

ME2N7002E N-Channel MOSFET GENERAL DESCRIPTION FEATURES 60V / 0.50A , RDS(ON)= 5.0@VGS=10V The ME2N7002E is the N-Channel enhancement mode field effect 60V / 0.30A , RDS(ON)= 5.5@VGS=4.5V transistors are produced using high cell density DMOS technology. Super high density cell design for extremely These products have been designed to minimize on-state resistanc

Datasheet: ME25N06 , ME25N06-G , ME2602 , ME2602-G , ME2604 , ME2604-G , ME2612 , ME2612-G , RU6888R , ME2N7002E , ME3205T , ME3205T-G , ME3587 , ME35N06 , ME35N06-G , ME35N10 , ME35N10-G .

History: P5506HVA | IXFT86N30T | AP3A010MT | DH400P06F | HGB100N12S | 2N4221A | STL4N80K5

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