ME2N7002D MOSFET Datasheet: N-Ch, 60V, 0.3A. Full specification with pinout and replacement list

ME2N7002D Specs and Replacement

Type Designator: ME2N7002D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 10 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: SOT-23

ME2N7002D substitution

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ME2N7002D datasheet

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ME2N7002D N-Channel MOSFET ESD Protected GENERAL DESCRIPTION FEATURES Simple Drive Requirement The ME2N7002D is the N-Channel logic enhancement mode power Small Package Outline field effect transistors are produced using high cell density , DMOS ROHS Compliant trench technology. This high density process is especially tailored to ESD Rating = 2000V HBM min... See More ⇒

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ME2N7002E N-Channel MOSFET GENERAL DESCRIPTION FEATURES 60V / 0.50A , RDS(ON)= 5.0 @VGS=10V The ME2N7002E is the N-Channel enhancement mode field effect 60V / 0.30A , RDS(ON)= 5.5 @VGS=4.5V transistors are produced using high cell density DMOS technology. Super high density cell design for extremely These products have been designed to minimize on-state resistanc... See More ⇒

Detailed specifications: ME25N06, ME25N06-G, ME2602, ME2602-G, ME2604, ME2604-G, ME2612, ME2612-G, AO3400A, ME2N7002E, ME3205T, ME3205T-G, ME3587, ME35N06, ME35N06-G, ME35N10, ME35N10-G