All MOSFET. ME2N7002D Datasheet

 

ME2N7002D MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME2N7002D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.8(max) nC
   Cossⓘ - Output Capacitance: 10(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: SOT-23

 ME2N7002D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME2N7002D Datasheet (PDF)

 ..1. Size:1630K  matsuki electric
 me2n7002d.pdf

ME2N7002D ME2N7002D

ME2N7002D N-Channel MOSFET ESD ProtectedGENERAL DESCRIPTION FEATURES Simple Drive Requirement The ME2N7002D is the N-Channel logic enhancement mode power Small Package Outline field effect transistors are produced using high cell density , DMOS ROHS Compliant trench technology. This high density process is especially tailored to ESD Rating = 2000V HBM min

 6.1. Size:605K  matsuki electric
 me2n7002e.pdf

ME2N7002D ME2N7002D

ME2N7002E N-Channel MOSFET GENERAL DESCRIPTION FEATURES 60V / 0.50A , RDS(ON)= 5.0@VGS=10V The ME2N7002E is the N-Channel enhancement mode field effect 60V / 0.30A , RDS(ON)= 5.5@VGS=4.5V transistors are produced using high cell density DMOS technology. Super high density cell design for extremely These products have been designed to minimize on-state resistanc

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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