All MOSFET. ME3587 Datasheet

 

ME3587 Datasheet and Replacement


   Type Designator: ME3587
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TSOP-6
 

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ME3587 Datasheet (PDF)

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 me3587 me3587-g.pdf pdf_icon

ME3587

ME3587/ME3587-G N- and P-Channel 20V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON) 45m@VGS=4.5V (N-Ch) The ME3587 is the N- and P-Channel logic enhancement mode RDS(ON) 68m@VGS=2.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 120m@VGS=1.8V (N-Ch) DMOS trench technology. This high density process is especia

 0.1. Size:159K  tysemi
 ke3587-g me3587-g.pdf pdf_icon

ME3587

SMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeMOSFETMOSFETProduct specification(ME3587-G)KE3587-G ( )SOT-23-6Unit: mm FeaturesN-channel:VDS=20V ID=4A RDS(ON)0.045 @VGS=4.5V S1 D2 D1 RDS(ON)0.068 @VGS=2.5V RDS(ON)0.12 @VGS=1.8VP-channel:VDS=-20V ID=-2A0to0.1 RDS(ON)0.11 @VGS=-4.5V

Datasheet: ME2604 , ME2604-G , ME2612 , ME2612-G , ME2N7002D , ME2N7002E , ME3205T , ME3205T-G , MMIS60R580P , ME35N06 , ME35N06-G , ME35N10 , ME35N10-G , ME4174 , ME4174-G , ME4411 , ME4411-G .

History: APT6011B2VFR | SPP03N60C3 | STD44N4LF6 | CJQ4406 | TSM2312CX | 2N7002NXBK | 2SJ49

Keywords - ME3587 MOSFET datasheet

 ME3587 cross reference
 ME3587 equivalent finder
 ME3587 lookup
 ME3587 substitution
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