ME3587 PDF and Equivalents Search

 

ME3587 Specs and Replacement

Type Designator: ME3587

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TSOP-6

ME3587 substitution

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ME3587 datasheet

 ..1. Size:1233K  matsuki electric
 me3587 me3587-g.pdf pdf_icon

ME3587

ME3587/ME3587-G N- and P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 45m @VGS=4.5V (N-Ch) The ME3587 is the N- and P-Channel logic enhancement mode RDS(ON) 68m @VGS=2.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 120m @VGS=1.8V (N-Ch) DMOS trench technology. This high density process is especia... See More ⇒

 0.1. Size:159K  tysemi
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ME3587

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Detailed specifications: ME2604, ME2604-G, ME2612, ME2612-G, ME2N7002D, ME2N7002E, ME3205T, ME3205T-G, 7N60, ME35N06, ME35N06-G, ME35N10, ME35N10-G, ME4174, ME4174-G, ME4411, ME4411-G

Keywords - ME3587 MOSFET specs

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