All MOSFET. ME35N10 Datasheet

 

ME35N10 Datasheet and Replacement


   Type Designator: ME35N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 28.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 166 nS
   Cossⓘ - Output Capacitance: 286 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-252
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ME35N10 Datasheet (PDF)

 ..1. Size:1166K  matsuki electric
 me35n10 me35n10-g.pdf pdf_icon

ME35N10

ME35N10/ME35N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME35N10 is the N-Channel logic enhancement mode power RDS(ON)22m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)26m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD

 9.1. Size:1755K  matsuki electric
 me35n06 me35n06-g.pdf pdf_icon

ME35N10

ME35N06/ME35N06-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)32m@VGS=10V The ME35N06-G is the N-Channel logic enhancement mode power RDS(ON)40m@VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to

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History: 2P986A | BSC0702LS | K1109 | 2SK3526-01SJ | AUIRF3710Z | KNP4665A | IPI111N15N3G

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