ME35N10 MOSFET: N-Ch, 100V, 28.1A. Full datasheet with pinout, specifications and replacement transistor list

ME35N10 Datasheet (PDF)

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ME35N10/ME35N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME35N10 is the N-Channel logic enhancement mode power RDS(ON)22m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)26m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD

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ME35N06/ME35N06-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)32m@VGS=10V The ME35N06-G is the N-Channel logic enhancement mode power RDS(ON)40m@VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to

Datasheet: ME2612-G , ME2N7002D , ME2N7002E , ME3205T , ME3205T-G , ME3587 , ME35N06 , ME35N06-G , IRF830 , ME35N10-G , ME4174 , ME4174-G , ME4411 , ME4411-G , ME4413D , ME4413D-G , ME4435 .