All MOSFET. ME4174-G Datasheet

 

ME4174-G Datasheet and Replacement


   Type Designator: ME4174-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: SOP-8
 

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ME4174-G Datasheet (PDF)

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ME4174-G

ME4174/ME4174-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4174 is the N-Channel logic enhancement mode power RDS(ON)6.2m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)11m@VGS=4.5V trench technology. This high density process is especially tailored Super high density cell design for extremely low RDS(ON)

Datasheet: ME3205T , ME3205T-G , ME3587 , ME35N06 , ME35N06-G , ME35N10 , ME35N10-G , ME4174 , 8N60 , ME4411 , ME4411-G , ME4413D , ME4413D-G , ME4435 , ME4435-G , ME4454 , ME4454-G .

History: APT3580BN | RSR030N06

Keywords - ME4174-G MOSFET datasheet

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