ME4174-G PDF and Equivalents Search

 

ME4174-G Specs and Replacement

Type Designator: ME4174-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm

Package: SOP-8

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ME4174-G datasheet

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 me4174 me4174-g.pdf pdf_icon

ME4174-G

ME4174/ME4174-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4174 is the N-Channel logic enhancement mode power RDS(ON) 6.2m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 11m @VGS=4.5V trench technology. This high density process is especially tailored Super high density cell design for extremely low RDS(ON) ... See More ⇒

Detailed specifications: ME3205T, ME3205T-G, ME3587, ME35N06, ME35N06-G, ME35N10, ME35N10-G, ME4174, IRFB7545, ME4411, ME4411-G, ME4413D, ME4413D-G, ME4435, ME4435-G, ME4454, ME4454-G

Keywords - ME4174-G MOSFET specs

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