ME4174-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME4174-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 15.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 37 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 260 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: SOP-8
ME4174-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME4174-G Datasheet (PDF)
me4174 me4174-g.pdf
ME4174/ME4174-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4174 is the N-Channel logic enhancement mode power RDS(ON)6.2m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)11m@VGS=4.5V trench technology. This high density process is especially tailored Super high density cell design for extremely low RDS(ON)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
