ME4548-G Specs and Replacement
Type Designator: ME4548-G
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 85 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP-8
ME4548-G substitution
- MOSFET ⓘ Cross-Reference Search
ME4548-G datasheet
me4548 me4548-g.pdf
ME4548/ME4548-G Dual N- and P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4548 is the dual N- and P-Channel logic enhancement RDS(ON) 18 m @VGS=10V (N-Ch) mode power field effect transistors are produced using high cell RDS(ON) 29 m @VGS=4.5V(N-Ch) density, DMOS trench technology. This high density process is RDS(ON) 22m @VGS=-10V(P-Ch) espe... See More ⇒
me4542 me4542-g.pdf
ME4542/ME4542-G N and P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 25m @VGS=10V (N-Ch) The ME4542 is the N and P Channel logic enhancement mode RDS(ON) 40m @VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 35m @VGS=-10V (P-Ch) DMOS trench technology. This high density process is especially ... See More ⇒
Detailed specifications: ME4413D-G, ME4435, ME4435-G, ME4454, ME4454-G, ME4542, ME4542-G, ME4548, IRFZ44N, ME4565, ME4565A, ME4565A-G, ME4565AD4, ME4565AD4-G, ME45N03T, ME45N03T-G, ME45P04
Keywords - ME4548-G MOSFET specs
ME4548-G cross reference
ME4548-G equivalent finder
ME4548-G pdf lookup
ME4548-G substitution
ME4548-G replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: MVMBF0201NL | AON4407
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