ME4548-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME4548-G
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 8.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 85 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP-8
ME4548-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME4548-G Datasheet (PDF)
me4548 me4548-g.pdf
ME4548/ME4548-G Dual N- and P-Channel 30-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME4548 is the dual N- and P-Channel logic enhancement RDS(ON) 18 m@VGS=10V (N-Ch)mode power field effect transistors are produced using high cell RDS(ON) 29 m@VGS=4.5V(N-Ch)density, DMOS trench technology. This high density process is RDS(ON) 22m@VGS=-10V(P-Ch)espe
me4542 me4542-g.pdf
ME4542/ME4542-G N and P- Channel 30-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)25m@VGS=10V (N-Ch) The ME4542 is the N and P Channel logic enhancement mode RDS(ON)40m@VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON)35m@VGS=-10V (P-Ch) DMOS trench technology. This high density process is especially
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