ME4548-G PDF and Equivalents Search

 

ME4548-G Specs and Replacement

Type Designator: ME4548-G

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOP-8

ME4548-G substitution

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ME4548-G datasheet

 ..1. Size:1677K  matsuki electric
me4548 me4548-g.pdf pdf_icon

ME4548-G

ME4548/ME4548-G Dual N- and P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4548 is the dual N- and P-Channel logic enhancement RDS(ON) 18 m @VGS=10V (N-Ch) mode power field effect transistors are produced using high cell RDS(ON) 29 m @VGS=4.5V(N-Ch) density, DMOS trench technology. This high density process is RDS(ON) 22m @VGS=-10V(P-Ch) espe... See More ⇒

 9.1. Size:1411K  matsuki electric
me4542 me4542-g.pdf pdf_icon

ME4548-G

ME4542/ME4542-G N and P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 25m @VGS=10V (N-Ch) The ME4542 is the N and P Channel logic enhancement mode RDS(ON) 40m @VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 35m @VGS=-10V (P-Ch) DMOS trench technology. This high density process is especially ... See More ⇒

Detailed specifications: ME4413D-G, ME4435, ME4435-G, ME4454, ME4454-G, ME4542, ME4542-G, ME4548, IRFZ44N, ME4565, ME4565A, ME4565A-G, ME4565AD4, ME4565AD4-G, ME45N03T, ME45N03T-G, ME45P04

Keywords - ME4548-G MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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