All MOSFET. ME45N03T-G Datasheet

 

ME45N03T-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME45N03T-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 58 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 133 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO-220

 ME45N03T-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME45N03T-G Datasheet (PDF)

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 me45n03t me45n03t-g.pdf

ME45N03T-G ME45N03T-G

ME45N03T/ME45N03T-G30V N-Channel Enhancement ModeGENERAL DESCRIPTION FEATURES RDS(ON)14m@VGS=10V The ME45N03T is the N-Channel logic enhancement mode power RDS(ON)21m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially

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