ME45P04-G MOSFET Datasheet: P-Ch, 40V, 30A. Full specification with pinout and replacement list

ME45P04-G Specs and Replacement

Type Designator: ME45P04-G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO-252

ME45P04-G substitution

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ME45P04-G datasheet

..1. Size:1365K matsuki electric
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ME45P04/ME45P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME45P04-G is the P-Channel logic enhancement mode power RDS(ON) 18m @VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON) 25m @VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely lo... See More ⇒

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ME45P04 www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle... See More ⇒

Detailed specifications: ME4565, ME4565A, ME4565A-G, ME4565AD4, ME4565AD4-G, ME45N03T, ME45N03T-G, ME45P04, IRFZ44, ME4626, ME4626-G, ME4825, ME4825-G, ME4925, ME4925-G, ME4946, ME4946-G