All MOSFET. ME45P04-G Datasheet

 

ME45P04-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME45P04-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO-252

 ME45P04-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME45P04-G Datasheet (PDF)

 ..1. Size:1365K  matsuki electric
 me45p04 me45p04-g.pdf

ME45P04-G ME45P04-G

ME45P04/ME45P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME45P04-G is the P-Channel logic enhancement mode power RDS(ON)18m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)25m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely lo

 7.1. Size:884K  cn vbsemi
 me45p04.pdf

ME45P04-G ME45P04-G

ME45P04www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle

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