ME4626 MOSFET Datasheet: N-Ch, 30V, 21A. Full specification with pinout and replacement list

ME4626 Specs and Replacement

Type Designator: ME4626

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 660 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: SOP-8

ME4626 substitution

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ME4626 datasheet

..1. Size:1347K matsuki electric
me4626 me4626-g.pdf pdf_icon

ME4626/ME4626-G N-Channel 30-V(D-S) MOSFET Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) GENERAL DESCRIPTION FEATURES The ME4626-G is the N-Channel logic enhancement mode power RDS(ON) 3.5m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 4.5m @VGS=4.5V trench technology. This high density process is especially tailor... See More ⇒

..2. Size:1598K cn vbsemi
me4626.pdf pdf_icon

ME4626 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0030 at VGS = 10 V 25 TrenchFET Gen II 30 0.0040 at VGS = 4.5 V Ultra Low On-Resistance Using High 22 Density TrenchFET Power MOSFET Technology APPLICATIONS Synchronous Buck Low-Side - Notebook - Server ... See More ⇒

Detailed specifications: ME4565A, ME4565A-G, ME4565AD4, ME4565AD4-G, ME45N03T, ME45N03T-G, ME45P04, ME45P04-G, IRF640, ME4626-G, ME4825, ME4825-G, ME4925, ME4925-G, ME4946, ME4946-G, ME4953-G